Datasheet > KO3416

KO3416

更新时间： 2024-10-15 18:09:43

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
4页	223K
描述
N-Channel MOSFET

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中文翻译

获取价格

数据手册

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KO3416 数据手册

SMD Type

MOSFIECT

N-Channel Enhancement Mode

Field Effect Transistor

KO3416

SOT-23-3

Unit: mm

+0.2

-0.2

2.9

0.4

+0.1

-0.05

■ Features

● VDS (V) = 20V

● ID = 6.5 A

● RDS(ON) ＜ 22mΩ (VGS = 4.5V)

● RDS(ON) ＜ 26mΩ (VGS = 2.5V)

● RDS(ON) ＜ 34mΩ (VGS = 1.8V)

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.2

-0.2

1.9

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

Gate-Source Voltage

VGS

±8

6.5

Continuous Drain Current *1 TA=25℃

TA=70℃

5.2

Pulsed Drain Current *2

IDM

1.4

Power Dissipation *1

TA=25℃

TA=70℃

0.9

RθJA

RθJL

Thermal Resistance.Junction-to-Ambient *1

Maximum Junction-to-Lead *3

t ≤ 10s

℃/W

℃

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

*1: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper,

in a still air environment with T A =25°C. The value in any a given application depends on the user's

specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.

*2: Repetitive rating, pulse width limited by junction temperature.

*3. The RθJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.

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