Datasheet > KO3415A

KO3415A

更新时间： 2024-10-15 18:09:27

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	385K
描述
P-Channel MOSFET

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中文翻译

获取价格

数据手册

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KO3415A 数据手册

SMD Type

MOSFET

Transistors

P-Channel MOSFET

KO3415A

SOT-23

Unit: mm

■ Features

+0.1

-0.1

2.9

0.4

+0.1

-0.1

● VDS (V) =-12V

● ID =-4.1 A (VGS =-4.5V)

● RDS(ON) ＜ 45mΩ (VGS =-4.5V)

● RDS(ON) ＜ 60mΩ (VGS =-2.5V)

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1. Gate

2. Source

3. Drain

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

Rating

Unit

VDS

-12

±12

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

-4.1

-30

℃

Power Dissipation

1.2

Junction Temperature

150

Junction Storage Temperature Range

Tstg

-55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

Test Conditions

Min

-12

Typ

Max

Unit

Drain-Source Breakdown Voltage

VDSS

=-250μA, VGS=0V

DS=-12V, VGS=0V

-1

-5

Zero Gate Voltage Drain Current

IDSS

μA

DS=-12V, VGS=0V, TJ=55℃

Gate-Body Leakage Current

Gate Threshold Voltage

GSS

DS=0V, VGS=±12V

±100

-1.0

GS(th)

-0.45

DS=VGS , ID=-250μA

GS=-4.5V, I

GS=-2.5V, I

=-4.1A

=-3A

Static Drain-Source On-Resistance

Diode Forward Voltage

RDS(On)

mΩ

=-1A,VGS=0V

-1

■ Marking

Marking

3415A

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