Datasheet > KO3413

KO3413

更新时间： 2024-11-18 05:40:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管场效应晶体管
页数	文件大小	规格书
2页	79K
描述
P-Channel Enhancement Mode Field Effect Transistor

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中文翻译

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数据手册

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KO3413 数据手册

SMD Type

MOSFET

P-Channel Enhancement Mode

Field Effect Transistor

KO3413

SOT-23

Unit: mm

■ Features

+0.1

2.9_-0.1

+0.1

0.4_-0.1

● VDS (V) = -20V

● ID = -3 A

● RDS(ON) ＜ 97mΩ (VGS = -4.5V)

● RDS(ON) ＜ 130mΩ (VGS = -2.5V)

● RDS(ON) ＜ 190mΩ (VGS = -1.8V)

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

-20

Unit

Gate-Source Voltage

VGS

±8

-3

Continuous Drain Current *1

TA=25℃

-2.4

-15

TA=70℃

Pulsed Drain Current *2

Power Dissipation *1

IDM

1.4

TA=25℃

TA=70℃

0.9

Thermal Resistance.Junction-to-Ambient *1

Junction and Storage Temperature Range

RθJA

125

℃/W

TJ, TSTG

-55 to 150

℃

*1The value of R θJA is measured with the device mounted on 1in ²FR-4 board with 2oz.

Copper, in a still air environment with TA =25℃

*2 Repetitive rating, pulse width limited by junction temperature.

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