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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| KM681002CLT-10 | SAMSUNG |
获取价格 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial T |
|
| KM681002CLT-12 | SAMSUNG |
获取价格 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial T |
|
| KM681002CLT-15 | SAMSUNG |
获取价格 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial T |
|
| KM681002CLT-1500 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |
|
| KM681002CLT-20 | SAMSUNG |
获取价格 |
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial T |
|
| KM681002CLT-2000 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |
|
| KM681002CLTI-10 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |
|
| KM681002CLTI-12 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |
|
| KM681002CLTI-120 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |
|
| KM681002CLTI-20 | SAMSUNG |
获取价格 |
Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32 |
|
解析光耦仿真器：升级光耦合器技术的必要性
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台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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