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KM681002CLTI-120 PDF预览

KM681002CLTI-120

更新时间: 2024-11-27 03:24:47
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 199K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

KM681002CLTI-120 数据手册

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PRELIMINARY  
KM681002C/CL, KM681002CI/CLI  
CMOS SRAM  
Document Title  
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Preliminary  
Final  
Draft Data  
Aug. 5. 1998  
Mar. 3. 1999  
Initial release with Preliminary.  
Release to Final Data Sheet.  
1.1. Delete Preliminary.  
2.2. Added Data Retention Characteristics.  
Rev. 2.0  
Add 10ns part.  
Final  
Mar. 3. 2000  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 2.0  
March 2000  
- 1 -  

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Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
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Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32
KM681002CTI-1000 SAMSUNG

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Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32