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KM681002CTI-1200 PDF预览

KM681002CTI-1200

更新时间: 2024-11-26 14:34:11
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 199K
描述
Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

KM681002CTI-1200 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:32
Reach Compliance Code:unknownECCN代码:3A991.B.2.B
HTS代码:8542.32.00.41风险等级:5.83
Is Samacsys:N最长访问时间:12 ns
JESD-30 代码:R-PDSO-G32长度:20.95 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:128KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.2 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

KM681002CTI-1200 数据手册

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PRELIMINARY  
KM681002C/CL, KM681002CI/CLI  
CMOS SRAM  
Document Title  
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Preliminary  
Final  
Draft Data  
Aug. 5. 1998  
Mar. 3. 1999  
Initial release with Preliminary.  
Release to Final Data Sheet.  
1.1. Delete Preliminary.  
2.2. Added Data Retention Characteristics.  
Rev. 2.0  
Add 10ns part.  
Final  
Mar. 3. 2000  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 2.0  
March 2000  
- 1 -  

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