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KM681002CT-20 PDF预览

KM681002CT-20

更新时间: 2024-11-25 21:53:23
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
9页 201K
描述
128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated at Commercial and Industrial Temperature Ranges.

KM681002CT-20 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP32,.46
针数:32Reach Compliance Code:unknown
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
风险等级:5.91最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-PDSO-G32
JESD-609代码:e0长度:20.95 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:32字数:131072 words
字数代码:128000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:128KX8输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP32,.46封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified座面最大高度:1.2 mm
最大待机电流:0.005 A最小待机电流:4.5 V
子类别:SRAMs最大压摆率:0.07 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

KM681002CT-20 数据手册

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PRELIMINARY  
KM681002C/CL, KM681002CI/CLI  
CMOS SRAM  
Document Title  
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).  
Operated at Commercial and Industrial Temperature Ranges.  
Revision History  
Rev.No.  
Rev. 0.0  
Rev. 1.0  
History  
Remark  
Preliminary  
Final  
Draft Data  
Aug. 5. 1998  
Mar. 3. 1999  
Initial release with Preliminary.  
Release to Final Data Sheet.  
1.1. Delete Preliminary.  
2.2. Added Data Retention Characteristics.  
Rev. 2.0  
Add 10ns part.  
Final  
Mar. 3. 2000  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
Revision 2.0  
March 2000  
- 1 -  

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