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KM616FR1010AFI-10 PDF预览

KM616FR1010AFI-10

更新时间: 2024-11-10 15:36:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
9页 159K
描述
Standard SRAM, 64KX16, 100ns, CMOS, PBGA48, 6 X 7 MM, FBGA-48

KM616FR1010AFI-10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:TFBGA, BGA48,6X8,30
针数:48Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.41
风险等级:5.92最长访问时间:100 ns
I/O 类型:COMMONJESD-30 代码:R-PBGA-B48
JESD-609代码:e0长度:7 mm
内存密度:1048576 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:48字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TFBGA
封装等效代码:BGA48,6X8,30封装形状:RECTANGULAR
封装形式:GRID ARRAY, THIN PROFILE, FINE PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:1.8/2 V
认证状态:Not Qualified座面最大高度:1.2 mm
最小待机电流:1 V子类别:SRAMs
最大压摆率:0.02 mA最大供电电压 (Vsup):2.2 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:BALL端子节距:0.75 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:6 mmBase Number Matches:1

KM616FR1010AFI-10 数据手册

 浏览型号KM616FR1010AFI-10的Datasheet PDF文件第2页浏览型号KM616FR1010AFI-10的Datasheet PDF文件第3页浏览型号KM616FR1010AFI-10的Datasheet PDF文件第4页浏览型号KM616FR1010AFI-10的Datasheet PDF文件第5页浏览型号KM616FR1010AFI-10的Datasheet PDF文件第6页浏览型号KM616FR1010AFI-10的Datasheet PDF文件第7页 
KM616FR1010A Family  
CMOS SRAM  
Document Title  
64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
Initial Draft  
October 29, 1998  
Preliminary  
- Specify CSP type to distinguish between uBGA and FBGA  
Finalize  
July 29, 1999  
Final  
- Change operating voltage from 1.7~2.2V to 1.65~2.2V.  
- Change ICC2 from 25mA to 20mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
July 1999  
- 1 -  

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