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KM41V16000CT-L6 PDF预览

KM41V16000CT-L6

更新时间: 2024-11-07 20:58:39
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器光电二极管内存集成电路
页数 文件大小 规格书
19页 307K
描述
Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26

KM41V16000CT-L6 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:SOP,针数:26
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.84
访问模式:FAST PAGE最长访问时间:60 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHJESD-30 代码:R-PDSO-G24
内存密度:16777216 bit内存集成电路类型:FAST PAGE DRAM
内存宽度:1功能数量:1
端口数量:2端子数量:24
字数:16777216 words字数代码:16000000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:16MX1
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
认证状态:Not Qualified最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子位置:DUALBase Number Matches:1

KM41V16000CT-L6 数据手册

 浏览型号KM41V16000CT-L6的Datasheet PDF文件第2页浏览型号KM41V16000CT-L6的Datasheet PDF文件第3页浏览型号KM41V16000CT-L6的Datasheet PDF文件第4页浏览型号KM41V16000CT-L6的Datasheet PDF文件第5页浏览型号KM41V16000CT-L6的Datasheet PDF文件第6页浏览型号KM41V16000CT-L6的Datasheet PDF文件第7页 
KM41C16000C, KM41V16000C  
CMOS DRAM  
16M x1Bit CMOS Dynamic RAM with Fast Page Mode  
DESCRIPTION  
This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory  
cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5 or -6), power consumption(Normal or Low power) and  
package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and  
Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.  
This 16Mx1 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low  
power consumption and high reliability. It may be used as main memory unit for high level computer and microcomputer.  
FEATURES  
• Fast Page Mode operation  
Part Identification  
• CAS-before-RAS refresh capability  
• RAS-only and Hidden refresh capability  
• Self-refresh capability (L-ver only)  
- KM41C16000C/C-L (5V, 4K Ref.)  
- KM41V16000C/C-L (3.3V, 4K Ref.)  
• Fast Parallel test mode capability  
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs  
• Early Write Operation  
ActivePowerDissipation  
• JEDEC Standard pinout  
Unit : mW  
5V  
• Available in Plastic SOJ and TSOP(II) packages  
• Single +5V±10% power supply (5V product)  
• Single +3.3V±0.3V power supply (3.3V product)  
Speed  
-5  
3.3V  
324  
288  
495  
440  
-6  
Refresh Cycles  
FUNCTIONAL BLOCK DIAGRAM  
Part  
VCC  
Refresh  
Refresh period  
NO.  
cycle  
Normal  
L-ver  
RAS  
CAS  
W
Vcc  
Vss  
Control  
Clocks  
C16000C  
V16000C  
5V  
VBB Generator  
4K  
64ms  
128ms  
3.3V  
Data in  
D
Buffer  
Row Decoder  
Refresh Timer  
Refresh Control  
Refresh Counter  
Performance Range  
Memory Array  
16,777,216 x1  
Cells  
Speed  
-5  
Remark  
tRAC  
50ns  
60ns  
tCAC  
tRC  
90ns  
tPC  
13ns  
35ns 5V/3.3V  
Row Address Buffer  
Col. Address Buffer  
A0-A11  
A0-A11  
-6  
15ns 110ns 40ns 5V/3.3V  
Data out  
Buffer  
Q
Column Decoder  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to  
change products and specifications without notice.  

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