Datasheet > KM41V16000CJ-L5

KM41V16000CJ-L5

更新时间： 2024-11-16 09:44:27

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
19页	307K
描述
Fast Page DRAM, 16MX1, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, SOJ-26

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KM41V16000CJ-L5 数据手册

KM41C16000C, KM41V16000C

CMOS DRAM

16M x1Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Power supply voltage (+5.0V or +3.3V), access time (-5 or -6), power consumption(Normal or Low power) and

package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and

Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

This 16Mx1 Fast Page Mode DRAM family is fabricated using Samsung¢s advanced CMOS process to realize high band-width, low

power consumption and high reliability. It may be used as main memory unit for high level computer and microcomputer.

FEATURES

• Fast Page Mode operation

•

Part Identification

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

- KM41C16000C/C-L (5V, 4K Ref.)

- KM41V16000C/C-L (3.3V, 4K Ref.)

• Fast Parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write Operation

• ActivePowerDissipation

• JEDEC Standard pinout

Unit : mW

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)

Speed

-5

3.3V

324

288

495

440

-6

• Refresh Cycles

FUNCTIONAL BLOCK DIAGRAM

Part

VCC

Refresh

Refresh period

NO.

cycle

Normal

L-ver

RAS

CAS

Vcc

Vss

Control

Clocks

C16000C

V16000C

VBB Generator

64ms

128ms

3.3V

Data in

Buffer

Row Decoder

Refresh Timer

Refresh Control

Refresh Counter

• Performance Range

Memory Array

16,777,216 x1

Cells

Speed

-5

Remark

tRAC

50ns

60ns

tCAC

tRC

90ns

tPC

13ns

35ns 5V/3.3V

Row Address Buffer

Col. Address Buffer

A0-A11

-6

15ns 110ns 40ns 5V/3.3V

Data out

Buffer

Column Decoder

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...19

中文翻译

下载PDF

与KM41V16000CJ-L5相关器件

型号	品牌	获取价格	描述	数据表
KM41V16000CT-6	SAMSUNG	获取价格	Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26/24
KM41V16000CT-L5	SAMSUNG	获取价格	Fast Page DRAM, 16MX1, 50ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26
KM41V16000CT-L6	SAMSUNG	获取价格	Fast Page DRAM, 16MX1, 60ns, CMOS, PDSO24, 0.300 INCH, PLASTIC, TSOP2-26
KM41V4000BJ-10	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 100ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
KM41V4000BLJ-10	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 100ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
KM41V4000BLJ-7	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, 0.300 INCH, PLASTIC, SOJ-26/20
KM41V4000BLLJ-7	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20, PLASTIC, SOJ-26/20
KM41V4000BLLJ-8	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, PLASTIC, SOJ-26/20
KM41V4000BLLVR-8	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20, PLASTIC, REVERSE, TSOP1-24/20
KM41V4000BLP-10	SAMSUNG	获取价格	Fast Page DRAM, 4MX1, 100ns, CMOS, PDIP18, PLASTIC, DIP-18

与KM41V16000CJ-L5相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

7
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

4
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

30
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

13

产品中心

服务支持

精选活动

关于我们

帮助中心

KM41V16000CJ-L5

KM41V16000CJ-L5 数据手册

与KM41V16000CJ-L5相关器件

与KM41V16000CJ-L5相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

KM41V16000CJ-L5

KM41V16000CJ-L5 数据手册

与KM41V16000CJ-L5相关器件

与KM41V16000CJ-L5相关文章

您还可以找

您在本页遇到什么问题？