Datasheet > KF12N60P/F

KF12N60P/F

更新时间： 2024-01-03 05:28:38

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	401K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF12N60P/F 数据手册

KF12N60P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF12N60P

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

DIM MILLIMETERS

9.9 0.2

15.95 MAX

1.3+0.1/-0.05

0.8+ 0.1

FEATURES

3.6 0.2

2.8+ 0.1

· V_DSS=600V, I_D=12A

· Drain-Source ON Resistance :

R_DS(ON)=0.6Ω (Max) @V_GS=10V

· Qg(typ.)= 36nC

3.7

0.5+0.1/-0.05

1.5

13.08+ 0.3

1.46

1.4 + 0.1

1.27+ 0.1

2.54+ 0.2

MAXIMUM RATING (Tc=25℃)

4.5 0.2

2.4 0.2

RATING

9.2 + 0.2

CHARACTERISTIC

SYMBOL

UNIT

1. GATE

2. DRAIN

KF12N60P

KF12N60F

3. SOURCE

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

600

±30

TO-220AB

7.4

12*

7.4*

33*

I_D

Drain Current

@T_C=100℃

KF12N60F

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

450

Repetitive Avalanche Energy

(Note 1)

E_AR

DIM MILLIMETERS

10.16 0.2

Peak Diode Recovery dv/dt

(Note 3)

15.87 0.2

dv/dt

4.5

V/ns

2.54 0.2

0.8 0.1

215

49.8

0.4

W/℃

℃

Tc=25℃

Drain Power

Dissipation

3.18

0.1

P_D

3.3 0.1

12.57 0.2

1.72

Derate above 25℃

0.5 0.1

T_j

Maximum Junction Temperature

Storage Temperature Range

150

13.0 0.5

3.23 0.1

T_stg

-55∼ 150

℃

1.47 MAX

Thermal Characteristics

2.54 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

0.58

62.5

2.51

62.5

6.68 0.2

℃/W

4.7

0.2

Thermal Resistance,

Junction-to-Ambient

2.76 0.2

1. GATE

2. DRAIN

3. SOURCE

* : Drain current limited by maximum junction temperature.

*Single Gauge Lead Frame

TO-220IS (1)

EQUIVALENT CIRCUIT

2013. 5. 06

Revision No : 4

1/7

12 3 4 5 6 7

中文翻译

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