Datasheet > KF13N60N

KF13N60N

更新时间： 2024-11-19 05:40:51

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KEC		/
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描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF13N60N 数据手册

KF13N60N

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switching mode

power supplies.

MILLIMETERS

DIM

15.60 0.20

4.80 0.20

19.90 0.20

2.00 0.20

1.00 0.20

3.00 0.20

3.80 0.20

FEATURES

3.50 + 0.20

13.90 0.20

V_DSS(Min.)= 600V, I_D= 13A

Drain-Source ON Resistance :

R_DS(ON)=0.56(Max.) @V_GS=10V

Qg(typ.) =36nC

12.76 0.20

23.40 + 0.20

1.5+0.15-0.05

16.50 + 0.30

1.40 0.20

13.60 + 0.20

9.60 0.20

5.45 0.30

3.20 0.10

18.70 0.20

MAXIMUM RATING (Tc=25

CHARACTERISTIC

)

0.60+0.15-0.05

1. Gate

2. Drain

3. Source

SYMBOL RATING UNIT

V_DSS

V_GSS

I_D

Drain-Source Voltage

600

Gate-Source Voltage

TO-3P(N)-E

@T_C=25

Drain Current

I_DP

Pulsed

(Note1)

E_AS

E_AR

dv/dt

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

(Note 2)

(Note 1)

(Note 3)

870

22.5

4.5

V/ns

215

Tc=25

Derate above25

Drain Power

Dissipation

P_D

1.72

150

T_j

Maximum Junction Temperature

Storage Temperature Range

T_stg

-55 150

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

0.58

Marking

KF13N60

801

PRODUCT NAME

LOT NO

2008. 10. 2

Revision No : 1

1/6

12 3 4 5 6

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