KF12N60P/F
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF12N60P
A
O
C
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
F
E
I
DIM MILLIMETERS
G
_
A
B
C
D
E
F
9.9 0.2
+
B
15.95 MAX
1.3+0.1/-0.05
Q
_
0.8+ 0.1
FEATURES
_
3.6 0.2
+
_
2.8+ 0.1
· VDSS=600V, ID=12A
· Drain-Source ON Resistance :
RDS(ON)=0.6Ω (Max) @VGS=10V
· Qg(typ.)= 36nC
K
P
3.7
G
H
I
M
N
0.5+0.1/-0.05
1.5
L
J
_
J
13.08+ 0.3
K
L
M
N
O
P
D
1.46
_
1.4 + 0.1
H
N
_
1.27+ 0.1
_
2.54+ 0.2
MAXIMUM RATING (Tc=25℃)
_
+
4.5 0.2
_
+
2.4 0.2
RATING
_
9.2 + 0.2
Q
CHARACTERISTIC
SYMBOL
UNIT
1
2
3
1. GATE
2. DRAIN
KF12N60P
KF12N60F
3. SOURCE
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
600
V
V
±30
TO-220AB
12
7.4
33
12*
7.4*
33*
ID
Drain Current
@TC=100℃
A
KF12N60F
IDP
Pulsed (Note1)
C
A
Single Pulsed Avalanche Energy
(Note 2)
EAS
450
17
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
E
_
10.16 0.2
+
A
B
C
D
E
Peak Diode Recovery dv/dt
(Note 3)
_
15.87 0.2
+
dv/dt
4.5
V/ns
_
2.54 0.2
+
_
0.8 0.1
+
215
49.8
0.4
W
W/℃
℃
Tc=25℃
Drain Power
Dissipation
_
+
3.18
0.1
PD
_
3.3 0.1
+
_
12.57 0.2
+
F
1.72
Derate above 25℃
G
H
J
L
M
_
0.5 0.1
+
R
Tj
Maximum Junction Temperature
Storage Temperature Range
150
_
13.0 0.5
+
_
K
L
3.23 0.1
+
Tstg
-55∼ 150
℃
D
1.47 MAX
1.47 MAX
M
N
O
Q
R
Thermal Characteristics
N
N
H
_
2.54 0.2
+
_
RthJC
RthJA
Thermal Resistance, Junction-to-Case
0.58
62.5
2.51
62.5
6.68 0.2
+
℃/W
℃/W
_
4.7
+
_
0.2
Thermal Resistance,
Junction-to-Ambient
2.76 0.2
+
1
2
3
1. GATE
2. DRAIN
3. SOURCE
* : Drain current limited by maximum junction temperature.
*Single Gauge Lead Frame
TO-220IS (1)
EQUIVALENT CIRCUIT
D
G
S
2013. 5. 06
Revision No : 4
1/7