Datasheet > KF13N50P_10

KF13N50P_10

更新时间： 2024-11-19 11:29:35

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
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描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF13N50P_10 数据手册

KF13N50P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF13N50P

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

· V_DSS= 500V, I_D= 13A

· Drain-Source ON Resistance :

R_DS(ON)=0.44Ω (Max) @V_GS= 10V

· Qg(typ.) = 35nC

MAXIMUM RATING (Tc=25℃)

RATING

CHARACTERISTIC

SYMBOL

UNIT

KF13N50P

KF13N50F

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

500

±30

13*

I_D

Drain Current

@T_C=100℃

KF13N50F

I_DP

Pulsed (Note1)

40*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

860

19.5

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

208

49.8

0.4

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

1.66

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

0.6

62.5

2.51

62.5

℃/W

Thermal Resistance, Junction-to-

Ambient

* : Drain current limited by maximum junction temperature.

EQUIVALENT CIRCUIT

2010. 8. 16

Revision No : 2

1/7

12 3 4 5 6 7

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