Datasheet > KF10N50FZ

KF10N50FZ

更新时间： 2024-02-14 01:05:01

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	77K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF10N50FZ 数据手册

KF10N50P/F/PZ/FZ

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF10N50P,KF10N50PZ

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

FEATURES

0.8 + 0.1

3.6 0.2

V_DSS=500V, I_D=10A

Drain-Source ON Resistance :

2.8 + 0.1

3.7

0.5+0.1/-0.05

1.5

R_DS(ON)(Max)=0.65

Qg(typ.)= 19.5nC

@V_GS=10V

13.08 + 0.3

1.46

1.4 0.1

MAXIMUM RATING (Tc=25

)

1.27 0.1

2.54 0.2

RATING

4.5 0.2

CHARACTERISTIC

SYMBOL

UNIT

2.4 0.2

1. GATE

2. DRAIN

KF10N50P

KF10N50F

9.2 +0.2

KF10N50PZ

KF10N50FZ

3. SOURCE

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25

500

TO-220AB

10*

I_D

Drain Current

@T_C=100

KF10N50F,KF10N50FZ

I_DP

Pulsed (Note1)

25*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

300

Repetitive Avalanche Energy

(Note 1)

DIM MILLIMETERS

E_AR

14.7

4.5

10.16 0.2

15.87 0.2

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

2.54 0.2

0.8 0.1

130

41.5

0.33

Tc=25

Drain Power

Dissipation

3.18

0.1

P_D

3.3 0.1

1.04

Derate above 25

12.57 0.2

0.5 0.1

T_j

Maximum Junction Temperature

Storage Temperature Range

150

13.0 0.5

3.23 0.1

T_stg

-55 150

1.47 MAX

Thermal Characteristics

1.47 MAX

2.54 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

0.96

62.5

3.0

6.68 0.2

4.7

0.2

1. GATE

2. DRAIN

3. SOURCE

Thermal Resistance,

Junction-to-Ambient

2.76 0.2

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

TO-220IS (1)

(KF10N50PZ, KF10N50FZ)

(KF10N50P, KF10N50F)

2008. 10. 29

Revision No : 1

1/7

12 3 4 5 6 7

中文翻译

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