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KF10N60FR PDF预览

KF10N60FR

更新时间: 2024-01-08 11:39:51
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
7页 80K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF10N60FR 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.61
Is Samacsys:NBase Number Matches:1

KF10N60FR 数据手册

 浏览型号KF10N60FR的Datasheet PDF文件第2页浏览型号KF10N60FR的Datasheet PDF文件第3页浏览型号KF10N60FR的Datasheet PDF文件第4页浏览型号KF10N60FR的Datasheet PDF文件第5页浏览型号KF10N60FR的Datasheet PDF文件第6页浏览型号KF10N60FR的Datasheet PDF文件第7页 
KF10N60PR/FR  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF10N60PR  
A
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, fast reverse recovery time, low gate  
charge and excellent avalanche characteristics. It is mainly suitable for  
active power factor correction and switching mode power supplies.  
O
C
F
E
I
DIM MILLIMETERS  
G
Q
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
_
0.8 + 0.1  
FEATURES  
_
3.6 0.2  
+
VDSS=600V, ID=10A  
Drain-Source ON Resistance :  
K
_
2.8 + 0.1  
P
3.7  
0.5+0.1/-0.05  
1.5  
G
H
I
M
N
L
RDS(ON)(Max)=0.69  
Qg(typ.)= 29.5nC  
trr(typ.)=150nS  
@VGS=10V  
J
D
_
13.08 + 0.3  
J
1.46  
H
K
L
M
N
O
P
N
_
1.4 0.1  
+
_
1.27 0.1  
+
_
2.54 0.2  
+
MAXIMUM RATING (Tc=25  
)
_
4.5 0.2  
+
_
2.4 0.2  
+
_
9.2 +0.2  
RATING  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
CHARACTERISTIC  
SYMBOL  
UNIT  
Q
KF10N60PR  
KF10N60FR  
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25  
600  
30  
V
V
TO-220AB  
10  
6
10*  
6*  
ID  
Drain Current  
A
@TC=100  
KF10N60FR  
C
A
IDP  
Pulsed (Note1)  
25  
25*  
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
400  
16.5  
4.5  
mJ  
mJ  
DIM MILLIMETERS  
E
Repetitive Avalanche Energy  
(Note 1)  
EAR  
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
Peak Diode Recovery dv/dt  
(Note 3)  
_
2.54 0.2  
+
dv/dt  
V/ns  
_
0.8 0.1  
+
_
+
3.18  
0.1  
190  
50  
W
Tc=25  
Drain Power  
Dissipation  
_
3.3 0.1  
+
F
PD  
_
12.57 0.2  
+
G
H
J
1.52  
0.4  
Derate above 25  
W/  
L
M
_
0.5 0.1  
+
R
_
13.0 0.5  
+
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
_
K
L
3.23 0.1  
+
D
Tstg  
-55 150  
1.47 MAX  
1.47 MAX  
M
N
O
Q
R
N
N
H
Thermal Characteristics  
_
2.54 0.2  
+
_
6.68 0.2  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
0.65  
62.5  
2.5  
/W  
/W  
_
4.7  
+
_
0.2  
1. GATE  
2. DRAIN  
3. SOURCE  
2.76 0.2  
+
Thermal Resistance,  
Junction-to-Ambient  
1
2
3
62.5  
* : Drain current limited by maximum junction temperature.  
PIN CONNECTION  
TO-220IS (1)  
(KF10N60PR, KF10N60FR)  
D
G
S
2008. 11. 12  
Revision No : 0  
1/7  

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