Datasheet > KF10N50PR

KF10N50PR

更新时间： 2024-01-25 04:59:40

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	81K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF10N50PR 数据手册

KF10N50PR/FR

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF10N50PR

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

active power factor correction and switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8 + 0.1

FEATURES

3.6 0.2

V_DSS=500V, I_D=10A

Drain-Source ON Resistance :

2.8 + 0.1

3.7

0.5+0.1/-0.05

1.5

R_DS(ON)(Max)=0.65

Qg(typ.)= 19.5nC

· t_rr(typ)= 170ns

@V_GS=10V

13.08 + 0.3

1.46

1.4 0.1

1.27 0.1

2.54 0.2

MAXIMUM RATING (Tc=25

)

4.5 0.2

2.4 0.2

9.2 +0.2

RATING

1. GATE

2. DRAIN

3. SOURCE

CHARACTERISTIC

SYMBOL

UNIT

KF10N50PR

KF10N50FR

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25

500

TO-220AB

10*

I_D

Drain Current

KF10N50FR

@T_C=100

I_DP

Pulsed (Note1)

25*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

300

14.7

4.5

DIM MILLIMETERS

Repetitive Avalanche Energy

(Note 1)

E_AR

10.16 0.2

15.87 0.2

Peak Diode Recovery dv/dt

(Note 3)

2.54 0.2

dv/dt

V/ns

0.8 0.1

3.18

0.1

130

41.5

0.33

Tc=25

Drain Power

Dissipation

3.3 0.1

P_D

12.57 0.2

1.04

Derate above 25

0.5 0.1

13.0 0.5

T_j

Maximum Junction Temperature

Storage Temperature Range

150

3.23 0.1

T_stg

-55 150

1.47 MAX

Thermal Characteristics

2.54 0.2

6.68 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

0.96

62.5

3.0

4.7

0.2

1. GATE

2. DRAIN

3. SOURCE

2.76 0.2

Thermal Resistance,

Junction-to-Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

TO-220IS (1)

(KF10N50PR, KF10N50FR)

2008. 11. 19

Revision No : 0

1/7

12 3 4 5 6 7

中文翻译

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