Datasheet > KCQ120A06E

KCQ120A06E

更新时间： 2024-11-25 21:20:55

品牌	Logo	应用领域
NIEC		局域网功效二极管
页数	文件大小	规格书
6页	66K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 120A, 60V V(RRM), Silicon, SIMILAR TO TO-247AC, TO-3P, 3 PIN

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中文翻译

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数据手册

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KCQ120A06E 数据手册

SBD T y p e : KCQ120A06E

OUTLINE DRAWING

FEATURES

*Similar to TO-247AC (TO-3P) Case

*Dual Diodes – Cathode Common

*Low Forward Voltage Drop

*Low Power Loss,High Efficiency

*High Surge Capability

*Tj=150 °C operation

Maximum Ratings

Approx Net Weight: 30g

KCQ120A06E

Rating

Symbol

V_RRM

Unit

Repetitive Peak Reverse Voltage

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

120

700

Tc=74°C

I_F(RMS)

I_FSM

133

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

Operating JunctionTemperature Range

Storage Temperature Range

T_jw

T_stg

-40 to +150

°C

Anode,Kathode Lead recommended torque

0.5

Mounting torque

Ftor

N•m

Kathode Base recommended torque

2.4

Electrical • Thermal Characteristics

Characteristics

Peak Reverse Current

Symbol

Conditions

Min. Typ. Max. Unit

Tj= 25°C, V_RM= V_RRM

per arm

Tj= 25°C, I_FM= 60 A

per arm

I_RM

Peak Forward Voltage

V_FM

0.71

Thermal Resistance (Junction to Case)

Rth(j-c) Junction to Case

0.45 °C /W

12 3 4 5 6

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