Datasheet > KCQ60A04

KCQ60A04

更新时间： 2024-09-15 23:14:31

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	49K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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KCQ60A04 数据手册

SBD T y p e : KCQ60A04

OULINE DRAWING

FEATURES

* Similar to TO-247AC(TO-3P)Case

* Dual Diodes Cathode Common

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Current Capability

* 40 Volts thru 60 Volts Types Available

Maximum Ratings

Approx Net Weight: 5.55g

KCQ60A04

Rating

Symbol

V_RRM

I_O

I_F(RMS)

I_FSM

Unit

Repetitive Peak Reverse Voltage

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

60 Tc=83°C

66.6

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

400

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance Junction to Case

I_RM

V_FM

Tj= 25°C, V_RM= V_RRMper Arm

Tj=25°C, I_FM=30A per Arm

0.58

1.0 °C /W

Rth(j-c) Junction to Case

12 3 4 5 6

中文翻译

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