KCQ20A03L

更新时间： 2024-09-15 23:15:11

品牌	Logo	应用领域
NIEC		整流二极管肖特基二极管瞄准线局域网
页数	文件大小	规格书
6页	50K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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KCQ20A03L 数据手册

SBD T y p e : KCQ20A03L

OULINE DRAWING

FEATURES

* Similar to TO-247AC(TO-3P)Case

* Dual Diodes – Cathode Common

* Extremely Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Current Capability

* 30 Volts thru 60 Volts Types Available

Maximum Ratings

Approx Net Weight: 5.55g

KCQ20A03L

Rating

Symbol

V_RRM

Unit

Repetitive Peak Reverse Voltage

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

I_O

20 Tc=119°C

I_F(RMS)

I_FSM

22.2

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

180

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance Junction to Case

I_RM

V_FM

Tj= 25°C, V_RM= V_RRMper Arm

Tj=25°C, I_FM= 10A per Arm

0.49

1.5 °C /W

Rth(j-c) Junction to Case

12 3 4 5 6

中文翻译

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与KCQ20A03L相关器件

型号	品牌	获取价格	描述	数据表
KCQ20A04	NIEC	获取价格	Similar to TO-247C(TO-3P)Case, Low Forward Voltage Drop, High Surge Current Capability
KCQ20A04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ20A06	NIEC	获取价格	Schottky Barrier Diode
KCQ20A06	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ30A03L	NIEC	获取价格	Schottky Barrier Diode
KCQ30A03L	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ30A04	NIEC	获取价格	Schottky Barrier Diode
KCQ30A04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ30A06	NIEC	获取价格	Schottky Barrier Diode
KCQ30A06	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b