Datasheet > KCQ20A06

KCQ20A06

更新时间： 2024-11-05 23:15:11

品牌	Logo	应用领域
NIEC		肖特基二极管
页数	文件大小	规格书
6页	50K
描述
Schottky Barrier Diode

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

KCQ20A06 数据手册

SBD T y p e : KCQ20A06

OULINE DRAWING

FEATURES

* Similar to TO-247AC(TO-3P)Case

* Dual Diodes – Cathode Common

* Low Forward Voltage Drop

* Low Power Loss,High Efficiency

* High Surge Current Capability

* 30 Volts thru 60 Volts Types Available

Maximum Ratings

Approx Net Weight: 5.55g

KCQ20A06

Rating

Symbol

V_RRM

I_O

I_F(RMS)

I_FSM

Unit

Repetitive Peak Reverse Voltage

50 Hz Full Sine Wave

Resistive Load

Average Rectified Output Current

RMS Forward Current

20 Tc=111°C

22.2

50Hz Full Sine Wave ,1cycle

Non-repetitive

Surge Forward Current

150

Operating JunctionTemperature Range

Storage Temperature Range

Mounting torque

T_jw

T_stg

Ftor

-40 to +150

recommended torque = 0.5

°C

N•m

Electrical • Thermal Characteristics

Characteristics

Symbol

Conditions

Min. Typ. Max. Unit

Peak Reverse Current

Peak Forward Voltage

Thermal Resistance Junction to Case

I_RM

V_FM

Tj= 25°C, V_RM= V_RRMper Arm

Tj=25°C, I_FM= 10A per Arm

0.65

1.5 °C /W

Rth(j-c) Junction to Case

12 3 4 5 6

中文翻译

下载PDF

与KCQ20A06相关器件

型号	品牌	获取价格	描述	数据表
KCQ30A03L	NIEC	获取价格	Schottky Barrier Diode
KCQ30A03L	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ30A04	NIEC	获取价格	Schottky Barrier Diode
KCQ30A04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ30A06	NIEC	获取价格	Schottky Barrier Diode
KCQ30A06	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ60A03L	NIEC	获取价格	Rectifier Diode, Schottky, 1 Phase, 2 Element, 60A, 30V V(RRM), Silicon,
KCQ60A03L	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b
KCQ60A04	NIEC	获取价格	Schottky Barrier Diode
KCQ60A04	KYOCERA AVX	获取价格	Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b