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KC847S PDF预览

KC847S

更新时间: 2024-11-18 12:33:59
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
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描述
Low collector-emitter saturation voltage

KC847S 数据手册

  
Product specification  
KC847S(BC847S)  
SOT-363  
Unit: mm  
+0.1  
1.3  
-0.1  
0.65  
Features  
High current gain  
Low collector-emitter saturation voltage  
+0.05  
0.1  
-0.02  
+0.1  
0.3  
-0.1  
+0.1  
2.1  
-0.1  
1 E1  
2 B1  
3 C2  
4 E2  
5 B2  
6 C1  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
50  
Unit  
V
Collector-Emitter Voltage  
45  
V
Emitter-Base Voltage  
6.0  
V
Collector Current  
100  
mA  
mW  
mW/  
/W  
Total Device Dissipation  
300  
PD  
2.4  
Derate above 25  
Thermal Resistance, Junction to Ambient  
Operating and Storage Junction Temperature Range  
R
JA  
415  
TJ, Tstg  
-55 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
50  
Typ  
Max  
Unit  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
VCBO  
VCEO  
VEBO  
V
V
IC = 10 A, IE = 0  
IC = 10 mA, IB = 0  
45  
6.0  
V
IE = 10 A, IC = 0  
VCB = 30 V, IE = 0  
15  
nA  
Collector-Cutoff Current  
DC Current Gain  
ICBO  
hFE  
5.0  
VCB = 30 V, IE = 0, TA = 150  
IC = 2.0 mA, VCE = 5.0 V  
IC = 10 mA, IB = 0.5 mA  
IC = 100 mA, IB = 5.0 mA  
IC = 2.0 mA, VCE = 5.0 V  
IC = 10 mA, VCE = 5.0 V  
VCB = 10 V, f = 1.0 MHz  
IC = 20 mA, VCE = 5.0,f = 100 mHz  
A
110  
630  
0.25  
0.65  
0.7  
V
V
Collector-Emitter Saturation Voltage  
VCE(sat)  
0.58  
V
Base-Emitter ON Voltage  
VBE(on)  
0.77  
V
Output Capacitance  
Transistion frequency  
Cob  
fT  
2.0  
pF  
MHz  
200  
Marking  
Marking  
1C  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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