Datasheet > KC856S(BC856S)

KC856S(BC856S)

更新时间： 2024-10-15 18:09:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	41K
描述
Dual PNP Transistor

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中文翻译

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数据手册

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KC856S(BC856S) 数据手册

SMD Type

Transistors

PNP General Purpose Double Transistor

KC856S^(BC856S)

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

Two transistors in one package

Reduces number of components and board space

No mutual interference between the transistors.

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

1 E1

2 B1

3 C2

4 E2

5 B2

6 C1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

-80

-65

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current - Continuous

Power Dissipation

-100

200

Thermal Resistance, Junction to Ambient

Operating and Storage Junction Temperature Range

416

TJ, Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

110

Typ

Max

Unit

VCB =- 30 V, IE = 0

-15

-5.0

-100

Collector-Cutoff Current

ICBO

VCB =- 30 V, IE = 0, TA = 150

IC=0,VEB=-5V

Emitter- cutoff current

DC Current Gain

IEBO

hFE

IC = -2.0 mA, VCE = -5.0 V

IC = -10 mA, IB =- 0.5 mA

IC = -100 mA, IB =- 5.0 mA

-100

-300

Collector-Emitter Saturation Voltage

VCE(sat)

Base-Emitter Saturation Voltage

Output Capacitance

VBE(sat) IC = -10 mA, IB=-0.5mA

700

m V

Cob

VCB = -10 V, f = 1.0 MHz

IC = -10 mA, VCE = -5.0V,f = 100 mHz

2.5

Transistion frequency

100

MHz

Marking

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