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KC856S

更新时间: 2024-11-18 12:33:59
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
1页 51K
描述
Reduces number of components and board space

KC856S 数据手册

  
Product specification  
KC856S(BC856S)  
SOT-363  
Unit: mm  
+0.1  
1.3  
-0.1  
0.65  
Features  
Two transistors in one package  
Reduces number of components and board space  
No mutual interference between the transistors.  
+0.05  
0.1  
-0.02  
+0.1  
0.3  
-0.1  
+0.1  
2.1  
-0.1  
1 E1  
2 B1  
3 C2  
4 E2  
5 B2  
6 C1  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
-80  
Unit  
V
Collector-Emitter Voltage  
-65  
V
Emitter-Base Voltage  
-5  
V
Collector Current - Continuous  
Power Dissipation  
-100  
mA  
mW  
/W  
PD  
200  
Thermal Resistance, Junction to Ambient  
Operating and Storage Junction Temperature Range  
R
JA  
416  
TJ, Tstg  
-65 to +150  
Electrical Characteristics Ta = 25  
Parameter  
Symbol  
Testconditons  
Min  
110  
Typ  
Max  
-15  
Unit  
nA  
VCB =- 30 V, IE = 0  
Collector-Cutoff Current  
ICBO  
-5.0  
-100  
VCB =- 30 V, IE = 0, TA = 150  
IC=0,VEB=-5V  
A
Emitter- cutoff current  
DC Current Gain  
IEBO  
hFE  
nA  
IC = -2.0 mA, VCE = -5.0 V  
IC = -10 mA, IB =- 0.5 mA  
IC = -100 mA, IB =- 5.0 mA  
-100  
-300  
mV  
mV  
Collector-Emitter Saturation Voltage  
VCE(sat)  
Base-Emitter Saturation Voltage  
Output Capacitance  
VBE(sat) IC = -10 mA, IB=-0.5mA  
700  
m V  
pF  
Cob  
fT  
VCB = -10 V, f = 1.0 MHz  
IC = -10 mA, VCE = -5.0V,f = 100 mHz  
2.5  
Transistion frequency  
100  
MHz  
Marking  
Marking  
5F  
http://www.twtysemi.com  
1 of 1  
sales@twtysemi.com  
4008-318-123  

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