Datasheet > KC857T(BC857T)

KC857T(BC857T)

更新时间： 2024-11-18 18:10:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
1页	39K
描述
PNP Transistor

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中文翻译

获取价格

数据手册

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KC857T(BC857T) 数据手册

SMD Type

Transistors

PNP General Purpose Transistors

KC857T(BC857T)

SOT-523

+0.1

-0.1

Unit: mm

1.6

1.0

+0.1

-0.1

Features

+0.05

0.2

-0.05

+0.01

0.1

-0.01

Low current (max. 100 mA)

Low voltage (max. 45 V).

+0.25

0.3

-0.05

+0.1

0.5

-0.1

1. Base

2. Emitter

3. Collecter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

power dissipation

Symbol

VCBO

VCEO

VEBO

Rating

-50

Unit

-45

-5

-100

ICM

-200

150

Junction temperature

Storage temperature

150

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

ICBO

Testconditons

Min

Typ

Max

Unit

IE = 0; VCB =- 30 V

-15

-5

collector cut-off current

IE = 0; VCB = -30 V; Tj = 150

IC = 0; VEB = -5 V

emitter cut-off current

KC857AT

IEBO

-100

250

125

220

420

DC current gain

hFE

IC = -2 mA; VCE = -5 V

KC857BT

KC857CT

475

800

IC = -10 mA; IB = -0.5 mA

-200 mV

-400 mV

collector-emitter saturation voltage

base-emitter voltage

VCEsat

VBE

IC = -100 mA; IB =- 5 mA; *

IC = -2 mA; VCE = -5 V

IC = -10 mA; VCE = -5 V

-600

-750

-820

2.5

collector capacitance

emitter capacitance

IE = ie = 0; VCB = -10 V; f = 1 MHz

IC = ic = 0; VEB = -500 mV; f = 1 MHz

IC = -200 A; VCE = -5 V; RS = 2 k ;f =

1 kHz; B = 200 Hz

noise figure

transition frequency

IC = -10 mA; VCE = -5 V; f = 100 MHz

100

MHz

* Pulse test: tp

300 ms;

0.02.

Marking

NO.

KC857AT

KC857BT

KC857CT

Marking

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