Datasheet > KC847T

KC847T

更新时间： 2024-11-18 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
NPN General Purpose Transistors

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中文翻译

获取价格

数据手册

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KC847T 数据手册

SMD Type

Transistors

NPN General Purpose Transistors

KC847T^(BC847T)

SOT-523

+0.1

-0.1

Unit: mm

1.6

1.0

+0.1

-0.1

Features

+0.05

0.2

-0.05

+0.01

0.1

-0.01

Low current (max. 100 mA)

Low voltage (max. 45 V).

+0.25

0.3

-0.05

+0.1

0.5

-0.1

1. Base

2. Emitter

3. Collecter

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

power dissipation

Symbol

VCBO

VCEO

VEBO

Rating

Unit

100

ICM

200

150

Junction temperature

Storage temperature

150

Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

ICBO

Testconditons

IE = 0; VCB = 30 V

Min

Typ

Max

Unit

collector cut-off current

IE = 0; VCB = 30 V; Tj = 150

IC = 0; VEB = 5 V

emitter cut-off current

KC847AT

IEBO

100

220

110

200

420

DC current gain

hFE

IC = 2 mA; VCE = 5 V

KC847BT

KC847CT

450

800

200

IC = 10 mA; IB = 0.5 mA

collector-emitter saturation voltage

base-emitter voltage

VCEsat

VBE

IC = 100 mA; IB = 5 mA; *

IC = 2 mA; VCE = 5 V

IC = 10 mA; VCE = 5 V

400

700

770

1.5

580

collector capacitance

emitter capacitance

IE = ie = 0; VCB = 10 V; f = 1 MHz

IC = ic = 0; VEB = 500 mV; f = 1 MHz

IC = 200 A; VCE = 5 V; RS = 2 k ;f = 1

kHz; B = 200 Hz

noise figure

transition frequency

IC = 10 mA; VCE = 5 V; f = 100 MHz

100

MHz

* Pulse test: tp

300 ms;

0.02.

Marking

NO.

KC847AT

KC847BT

KC847CT

Marking

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