Datasheet > KC856S

KC856S

更新时间： 2024-11-18 05:40:47

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
1页	42K
描述
PNP General Purpose Double Transistor

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中文翻译

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KC856S 数据手册

SMD Type

Transistors

PNP General Purpose Double Transistor

KC856S^(BC856S)

SOT-363

Unit: mm

+0.1

1.3

-0.1

0.65

Features

Two transistors in one package

Reduces number of components and board space

No mutual interference between the transistors.

+0.05

0.1

-0.02

+0.1

0.3

-0.1

+0.1

2.1

-0.1

1 E1

2 B1

3 C2

4 E2

5 B2

6 C1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

VCBO

VCEO

VEBO

Rating

Unit

-80

-65

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current - Continuous

Power Dissipation

-100

200

Thermal Resistance, Junction to Ambient

Operating and Storage Junction Temperature Range

416

TJ, Tstg

-65 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

110

Typ

Max

Unit

VCB =- 30 V, IE = 0

-15

-5.0

-100

Collector-Cutoff Current

ICBO

VCB =- 30 V, IE = 0, TA = 150

IC=0,VEB=-5V

Emitter- cutoff current

DC Current Gain

IEBO

hFE

IC = -2.0 mA, VCE = -5.0 V

IC = -10 mA, IB =- 0.5 mA

IC = -100 mA, IB =- 5.0 mA

-100

-300

Collector-Emitter Saturation Voltage

VCE(sat)

Base-Emitter Saturation Voltage

Output Capacitance

VBE(sat) IC = -10 mA, IB=-0.5mA

700

m V

Cob

VCB = -10 V, f = 1.0 MHz

IC = -10 mA, VCE = -5.0V,f = 100 mHz

2.5

Transistion frequency

100

MHz

Marking

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与KC856S相关器件

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KC856S(BC856S)	KEXIN	获取价格	Dual PNP Transistor
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KC857B	TYSEMI	获取价格	Ideally suited for automatic insertion, For Switching and AF Amplifier Applications
KC857B	KEXIN	获取价格	PNP Transistor
KC857B(BC857B)	KEXIN	获取价格	PNP Transistor
KC857C	TYSEMI	获取价格	Ideally suited for automatic insertion, For Switching and AF Amplifier Applications
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