KBU806G

更新时间： 2024-01-27 17:22:42

品牌	Logo	应用领域
WTE		整流二极管桥式整流二极管局域网
页数	文件大小	规格书
3页	45K
描述
8.0A GLASS PASSIVATED BRIDGE RECTIFIER

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技术参数
数据手册

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KBU806G 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	风险等级：	5.68
二极管类型：	BRIDGE RECTIFIER DIODE	Base Number Matches：	1

KBU806G 数据手册

WTE

PO WER SEMICONDUCTORS

KBU800G – KBU810G

8.0A GLASS PASSIVATED BRIDGE RECTIFIER

Features

Glass Passivated Die Construction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

KBU

Min

Dim

Max

23.70

4.10

4.70

2.20

11.30

6.80

5.60

—

22.70

3.80

4.20

1.70

10.30

4.50

4.60

25.40

—

Mechanical Data

Case: Molded Plastic

19.30

17.80

7.10

5.20

1.30

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 8.0 grams (approx.)

Mounting Position: Any

16.80

6.60

4.70

1.20

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBU

800G

KBU

801G

KBU

802G

KBU

804G

KBU

806G

KBU

808G

KBU

810G

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

8.0

Average Rectified Output Current

@T_A= 65°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

200

Forward Voltage (per element)

@I_F= 4.0A

V^FM

I^R

1.1

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 125°C

5.0

500

µA

°C

Operating and Storage Temperature Range

T^j,T^STG

-55 to +150

KBU800G – KBU810G

1 of 3

12 3

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