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KBU806-G PDF预览

KBU806-G

更新时间: 2024-02-07 05:04:49
品牌 Logo 应用领域
上华 - COMCHIP 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
3页 87K
描述
Silicon Bridge Rectifiers

KBU806-G 技术参数

生命周期:ActiveReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.68
二极管类型:BRIDGE RECTIFIER DIODEBase Number Matches:1

KBU806-G 数据手册

 浏览型号KBU806-G的Datasheet PDF文件第2页浏览型号KBU806-G的Datasheet PDF文件第3页 
Silicon Bridge Rectifiers  
KBU8005-G Thru. KBU810-G  
Reverse Voltage: 50 to 1000V  
Forward Current: 8.0A  
RoHS Device  
KBU  
Features  
0.15ΦX23L  
(3.8ΦX5.7L)  
HOLE THRU  
0.157(4.0)*45°  
-Surge overload rating - 200 amperes peak.  
-Ideal for printed circuit board.  
0.935(23.7)  
0.895(22.7)  
300  
(7.5)  
-Plastic material has U/L flammability  
classification 94V-0  
0.700(17.8)  
0.600(16.8)  
0.780(19.8)  
0.740(18.8)  
Mechanical Data  
1.00  
(25.4)  
MIN.  
0.052(1.3)DIA.  
0.048(1.2)TYP.  
-Case: Molded plastic, KBU  
-Mounting position: Any  
-Weight: 7.40grams  
.087(2.2)  
.071(1.8)  
0.220(5.6)  
0.180(4.6)  
0.276(7.0)  
0.256(6.5)  
Dimensions in inches and (millimeter)  
Maximum ratings and electrical characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
KBU  
8005-G  
KBU  
801-G  
KBU  
802-G  
KBU  
804-G  
KBU  
806-G  
KBU  
808-G  
KBU  
810-G  
Symbol  
Parameter  
Unit  
Maximum Recurrent Peak Reverse Voltage  
V
RRM  
RMS  
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
V
V
V
V
Maximum RMS Voltage  
V
DC  
100  
1000  
Maximum DC Blocking Voltage  
Maximum Average Forward  
I(AV)  
8.0  
200  
1.0  
A
A
V
Rectified Output Current  
@Tc=100°C  
Peak Forward Surge Current 8.3ms single  
Half Sine-Wave Super Imposed on Rated Load  
(JEDEC Method)  
IFSM  
Maximum Instantanous Forward Voltage Drop  
per Element at 4.0A  
V
F
@TJ=25°C  
@TJ=100°C  
Maximum Reverse Leakage Current  
At Rate DC Blocking Voltage  
10  
300  
μA  
IR  
Typical Junction Capacitance Per Element (Note1)  
Operating Temperature Range  
Storage Temperature Range  
Notes:  
pF  
C
J
250  
-55 to +125  
-55 to +150  
°C  
°C  
TJ  
TSTG  
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2. Company reserves the right to improve product design , functions and reliability without notice.  
REV: A  
Page 1  
QW-BBR79  
Comchip Technology CO., LTD.  

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