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KBU808G PDF预览

KBU808G

更新时间: 2024-11-07 14:53:51
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 42K
描述
Single In-Line

KBU808G 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:compliant
HTS代码:8541.10.00.80风险等级:5.75
Is Samacsys:N其他特性:UL RECOGNIZED, HIGH RELIABILITY
最小击穿电压:800 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PSFM-T4
JESD-609代码:e0最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:8 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:800 V子类别:Bridge Rectifier Diodes
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

KBU808G 数据手册

 浏览型号KBU808G的Datasheet PDF文件第2页浏览型号KBU808G的Datasheet PDF文件第3页浏览型号KBU808G的Datasheet PDF文件第4页 
®
KBU800G – KBU810G  
8.0A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
A
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
Recognized File # E157705  
B
C
KBU  
Min  
D
Dim  
A
B
C
D
E
Max  
23.70  
4.10  
4.70  
2.20  
11.30  
5.60  
5.60  
22.70  
3.60  
4.20  
1.70  
10.30  
4.50  
4.60  
25.40  
K
J
L
-
~
~
+
E
G
H
J
Mechanical Data  
G
Case: KBU, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 8.0 grams (approx.)  
H
K
L
19.80  
17.80  
7.10  
4.60  
1.30  
M
16.80  
6.60  
4.10  
1.20  
M
N
P
Mounting Position: Any  
All Dimensions in mm  
Mounting Torque: 0.8 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
N
P
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
KBU  
800G  
KBU  
801G  
KBU  
802G  
KBU  
804G  
KBU  
806G  
KBU  
808G  
KBU  
810G  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
8.0  
V
A
Average Rectified Output Current @TC = 100°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
200  
1.0  
A
V
Forward Voltage per leg  
@IF = 4.0A  
VFM  
IRM  
Peak Reverse Current  
@TA = 25°C  
10  
1.0  
µA  
mA  
At Rated DC Blocking Voltage  
@TA = 125°C  
I2t Rating for Fusing (t < 8.3ms)  
I2t  
166  
A2s  
Typical Junction Capacitance (Note 2)  
CJ  
211  
94  
pF  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Case (Note 1)  
RθJA  
RθJC  
18  
3.0  
°C/W  
RMS Isolation Voltage Terminals to Case, t = 1min  
Operating and Storage Temperature Range  
VISO  
1500  
V
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Mounted on 75 x 75 x 3.0mm thick Al. heatsink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Mounted on PCB with 12 x 12mm copper pads and measured at lead length 9.5mm from case.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

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