KBU1000

更新时间： 2024-09-12 22:32:27

品牌	Logo	应用领域
WTE		整流二极管桥式整流二极管
页数	文件大小	规格书
3页	45K
描述
10A BRIDGE RECTIFIER

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中文翻译

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数据手册

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KBU1000 数据手册

WTE

PO WER SEMICONDUCTORS

KBU1000 – KBU1010

10A BRIDGE RECTIFIER

Features

Diffused Junction

Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

KBU

Min

Dim

Max

23.70

4.10

4.70

2.20

11.30

6.80

5.60

—

22.70

3.80

4.20

1.70

10.30

4.50

4.60

25.40

—

Mechanical Data

Case: Molded Plastic

19.30

17.80

7.10

5.20

1.30

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: As Marked on Body

Weight: 8.0 grams (approx.)

Mounting Position: Any

16.80

6.60

4.70

1.20

All Dimensions in mm

Marking: Type Number

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

KBU

1000

KBU

1001

KBU

1002

KBU

1004

KBU

1006

KBU

1008

KBU

1010

Characteristic

Symbol

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

V^RRM

V^RWM

V^R

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

V^R(RMS)

I^O

280

Average Rectified Output Current

@T_C= 100°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

I^FSM

300

Forward Voltage (per element)

@I_F= 5.0A

V^FM

I^R

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

1.0

µA

Rating for Fusing (t < 8.3ms) (Note 1)

Typical Thermal Resistance (Note 2)

I²^t

373

8.0

A²s

K/W

°C

R^ꢀ^JC

T^j,T^STG

Operating and Storage Temperature Range

-65 to +150

Note: 1. Non-repetitive for t > 1ms and < 8.3ms.

2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.

KBU1000 – KBU1010

1 of 3

12 3

中文翻译

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