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KBU1001 PDF预览

KBU1001

更新时间: 2024-02-12 01:01:39
品牌 Logo 应用领域
WTE 二极管局域网
页数 文件大小 规格书
3页 45K
描述
10A BRIDGE RECTIFIER

KBU1001 技术参数

生命周期:Active包装说明:R-PSFM-T4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68其他特性:HIGH RELIABILITY, UL RECOGNIZED
最小击穿电压:100 V配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4最大非重复峰值正向电流:300 A
元件数量:4相数:1
端子数量:4最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:100 V
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

KBU1001 数据手册

 浏览型号KBU1001的Datasheet PDF文件第2页浏览型号KBU1001的Datasheet PDF文件第3页 
WTE  
PO WER SEMICONDUCTORS  
KBU1000 – KBU1010  
10A BRIDGE RECTIFIER  
Features  
!
Diffused Junction  
A
!
!
!
!
!
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
B
C
KBU  
Min  
D
Dim  
A
B
C
D
E
Max  
23.70  
4.10  
4.70  
2.20  
11.30  
6.80  
5.60  
22.70  
3.80  
4.20  
1.70  
10.30  
4.50  
4.60  
25.40  
K
L
-
~
~
+
E
G
H
J
J
G
Mechanical Data  
!
!
Case: Molded Plastic  
H
K
L
19.30  
17.80  
7.10  
5.20  
1.30  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 8.0 grams (approx.)  
Mounting Position: Any  
M
N
16.80  
6.60  
4.70  
1.20  
M
N
P
!
!
!
!
All Dimensions in mm  
Marking: Type Number  
P
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
KBU  
1000  
KBU  
1001  
KBU  
1002  
KBU  
1004  
KBU  
1006  
KBU  
1008  
KBU  
1010  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
10  
V
A
Average Rectified Output Current  
@TC = 100°C  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on  
rated load (JEDEC Method)  
IFSM  
300  
A
Forward Voltage (per element)  
@IF = 5.0A  
VFM  
IR  
1.0  
V
Peak Reverse Current  
At Rated DC Blocking Voltage  
@TC = 25°C  
@TC = 100°C  
10  
1.0  
µA  
mA  
Rating for Fusing (t < 8.3ms) (Note 1)  
Typical Thermal Resistance (Note 2)  
I2t  
373  
8.0  
A2s  
K/W  
°C  
RJC  
Tj, TSTG  
Operating and Storage Temperature Range  
-65 to +150  
Note: 1. Non-repetitive for t > 1ms and < 8.3ms.  
2. Thermal resistance junction to case per element mounted on PC board with 13.0x13.0x0.03mm thick land areas.  
KBU1000 – KBU1010  
1 of 3  
© 2002 Won-Top Electronics  

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