5秒后页面跳转
KBU1001G PDF预览

KBU1001G

更新时间: 2023-12-06 20:01:40
品牌 Logo 应用领域
WON-TOP /
页数 文件大小 规格书
4页 42K
描述
Single In-Line

KBU1001G 数据手册

 浏览型号KBU1001G的Datasheet PDF文件第2页浏览型号KBU1001G的Datasheet PDF文件第3页浏览型号KBU1001G的Datasheet PDF文件第4页 
®
KBU1000G – KBU1010G  
10A GLASS PASSIVATED SINGLE PHASE BRIDGE RECTIFIER  
WON-TOP ELECTRONICS  
Features  
Glass Passivated Die Construction  
A
Low Forward Voltage Drop  
High Current Capability  
High Reliability  
High Surge Current Capability  
Ideal for Printed Circuit Boards  
Recognized File # E157705  
B
C
KBU  
Min  
D
Dim  
A
B
C
D
E
Max  
23.70  
4.10  
4.70  
2.20  
11.30  
5.60  
5.60  
22.70  
3.60  
4.20  
1.70  
10.30  
4.50  
4.60  
25.40  
K
J
L
-
~
~
+
E
G
H
J
Mechanical Data  
G
Case: KBU, Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
Polarity: As Marked on Body  
Weight: 8.0 grams (approx.)  
H
K
L
19.80  
17.80  
7.10  
4.60  
1.30  
M
16.80  
6.60  
4.10  
1.20  
M
N
P
Mounting Position: Any  
All Dimensions in mm  
Mounting Torque: 0.8 N.m Max.  
Lead Free: For RoHS / Lead Free Version,  
Add “-LF” Suffix to Part Number, See Page 4  
N
P
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified  
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
KBU  
Characteristic  
Symbol  
Unit  
1000G 1001G 1002G 1004G 1006G 1008G 1010G  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
VRWM  
VR  
50  
35  
100  
70  
200  
140  
400  
600  
420  
800  
560  
1000  
700  
V
RMS Reverse Voltage  
VR(RMS)  
IO  
280  
10  
V
A
Average Rectified Output Current @TC = 100°C  
(Note 1)  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single Half Sine-Wave Superimposed on  
Rated Load (JEDEC Method)  
IFSM  
220  
1.0  
A
V
Forward Voltage per leg  
@IF = 5.0A  
VFM  
IRM  
Peak Reverse Current  
@TA = 25°C  
10  
1.0  
µA  
mA  
At Rated DC Blocking Voltage  
@TA = 125°C  
I2t Rating for Fusing (t < 8.3ms)  
I2t  
200  
A2s  
Typical Junction Capacitance (Note 2)  
CJ  
211  
94  
pF  
Thermal Resistance Junction to Ambient (Note 3)  
Thermal Resistance Junction to Case (Note 1)  
RθJA  
RθJC  
16  
2.8  
°C/W  
RMS Isolation Voltage Terminals to Case, t = 1min  
Operating and Storage Temperature Range  
VISO  
1500  
V
TJ, TSTG  
-55 to +150  
°C  
Note: 1. Mounted on 85 x 85 x 1.5mm thick Al. heatsink.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  
3. Mounted on PCB with 12 x 12mm copper pads and measured at lead length 9.5mm from case.  
© Won-Top Electronics Co., Ltd.  
Revision: September, 2012  
www.wontop.com  
1

与KBU1001G相关器件

型号 品牌 描述 获取价格 数据表
KBU1001-G COMCHIP Silicon Bridge Rectifiers

获取价格

KBU1001G_1 TSC Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers

获取价格

KBU1001G_10 TSC Single Phase 10 AMPS. Glass Passivated Bridge Rectifiers

获取价格

KBU1001G_12 TSC Single Phase 10.0AMPS. Glass Passivated Bridge Rectifiers

获取价格

KBU1001G_14 TSC Glass Passivated Bridge Rectifiers

获取价格

KBU1001G-LF WTE 暂无描述

获取价格