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KA4A4P

更新时间: 2024-11-20 22:32:31
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管光电二极管
页数 文件大小 规格书
22页 373K
描述
RESISTOR BUILT-IN TYPE NPN TRANSISTOR

KA4A4P 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:USM, SC-75, 3 PINReach Compliance Code:compliant
风险等级:5.83Is Samacsys:N
其他特性:BUILT IN BIAS RESISTOR RATIO IS 4.7最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):95JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN LEAD端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

KA4A4P 数据手册

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DATA SHEET  
SILICON TRANSISTOR  
KA4xxx  
RESISTOR BUILT-IN TYPE NPN TRANSISTOR  
FEATURES  
PACKAGE DRAWING (Unit: mm)  
Compact package  
Resistors built-in type  
Complementary to KN4xxx  
+0.1  
–0  
0.3  
+0.1  
0.15  
–0.05  
3
ORDERING INFORMATION  
PART NUMBER  
0 to 0.1  
PACKAGE  
2
1
+0.1  
0.2  
–0  
KA4xxx  
SC-75 (USM)  
0.6  
0.5  
0.5  
0.75 0.05  
1.0  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
1.6 0.1  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
Collector Current (pulse) Note  
Total Power Dissipation  
Junction Temperature  
VCBO  
VCEO  
VEBO  
IC  
IC(pulse)  
PT  
60  
50  
5
0.1  
0.2  
V
V
V
A
A
W
°C  
°C  
EQUIVALENT CIRCUIT  
PIN CONNECTION  
1: Emitter  
3
2: Base  
0.2  
150  
3: Collector  
2
Tj  
Storage Temperature  
Tstg  
–55 to +150  
R
1
Note PW 10 ms, Duty Cycle 50%  
R
2
1
PART NUMBER  
KA4A4M  
KA4F4M  
KA4L4M  
KA4L3M  
KA4L3N  
MARK  
A4  
R1  
R2  
UNIT  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
PART NUMBER  
KA4L4L  
MARK  
K4  
R1  
R2  
UNIT  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
kΩ  
10.0  
22.0  
47.0  
4.7  
10.0  
22.0  
47.0  
4.7  
47.0  
10.0  
22.0  
47.0  
2.2  
22.0  
B4  
KA4A4Z  
KA4F4Z  
Y4  
C4  
Z4  
D4  
KA4L4Z  
N4  
P4  
E4  
4.7  
10.0  
KA4F3M  
KA4F3P  
KA4F3R  
KA4A4L  
2.2  
10.0  
47.0  
4.7  
KA4L3Z  
F4  
4.7  
Q4  
R4  
S4  
2.2  
KA4A3Q  
KA4A4P  
KA4F4N  
G4  
H4  
1.0  
10.0  
47.0  
47.0  
2.2  
10.0  
22.0  
10.0  
47.0  
X4  
KA4L4K  
T4  
10.0  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
The mark  
shows major revised points.  
Document No. D16495EJ3V0DS00 (3rd edition)  
Date Published October 2004 NS CP(K)  
Printed in Japan  
2002  

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暂无描述
KA4A4P-T1 RENESAS

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PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
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KA4A4P-T2 RENESAS

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KA4A4P-T2-A RENESAS

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RESISTOR BUILT-IN TYPE NPN TRANSISTOR