是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | USM, SC-75, 3 PIN | Reach Compliance Code: | compliant |
风险等级: | 5.83 | Is Samacsys: | N |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 4.7 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 50 V | 配置: | SINGLE WITH BUILT-IN RESISTOR |
最小直流电流增益 (hFE): | 95 | JESD-30 代码: | R-PDSO-G3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KA4A4P-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75 | |
KA4A4P-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75 | |
KA4A4P-AZ | RENESAS |
获取价格 |
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, SC-75, 3 PIN | |
KA4A4P-AZ | NEC |
获取价格 |
暂无描述 | |
KA4A4P-T1 | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75 | |
KA4A4P-T1-A | RENESAS |
获取价格 |
KA4A4P-T1-A | |
KA4A4P-T1-AT | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75 | |
KA4A4P-T2 | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75 | |
KA4A4P-T2-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75 | |
KA4A4Z | NEC |
获取价格 |
RESISTOR BUILT-IN TYPE NPN TRANSISTOR |