Datasheet > KA4F3P

KA4F3P

更新时间： 2024-11-06 19:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		光电二极管晶体管
页数	文件大小	规格书
22页	336K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC-75, 3 PIN

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中文翻译

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技术参数
数据手册

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KA4F3P 技术参数

生命周期：	Obsolete	零件包装代码：	SC-75
包装说明：	SMALL OUTLINE, R-PDSO-G3	针数：	3
Reach Compliance Code：	compliant	ECCN代码：	EAR99
HTS代码：	8541.21.00.95	风险等级：	5.52
其他特性：	BUILT IN BIAS RESISTOR RATIO IS 4.545	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	80	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	认证状态：	Not Qualified
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	晶体管元件材料：	SILICON
Base Number Matches：	1

KA4F3P 数据手册

DATA SHEET

SILICON TRANSISTOR

KA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

FEATURES

PACKAGE DRAWING (Unit: mm)

• Compact package

• Resistors built-in type

• Complementary to KN4xxx

+0.1

–0

0.3

+0.1

–0.05

0.15

ORDERING INFORMATION

PART NUMBER

0 to 0.1

PACKAGE

+0.1

–0

0.2

KA4xxx

SC-75 (USM)

0.6

0.05

0.5

0.75

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

1.0

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

VCBO

V^CEO

V^EBO

I^C

1.6 ± 0.1

EQUIVALENT CIRCUIT

PIN CONNECTION

1: Emitter

Note1

0.1

Collector Current (pulse) ^Note2IC(pulse)

0.2

2: Base

Total Power Dissipation ^Note3

Junction Temperature

Storage Temperature

T^j

0.2

°C

3: Collector

150

T^stg

–55 to +150

Note 1.

PART NUMBER

VEBO

MARK

R¹

R²

PART NUMBER

VEBO

MARK

R¹

R²

(V)

(kΩ)

10.0

22.0

47.0

4.7

(kΩ)

(V)

(kΩ)

KA4A4M

KA4F4M

KA4L4M

KA4L3M

KA4L3N

KA4L3Z

KA4A3Q

KA4A4P

KA4F4N

10.0

22.0

47.0

4.7

KA4L4L

KA4A4Z

KA4F4Z

KA4L4Z

KA4F3M

KA4F3P

KA4F3R

KA4A4L

KA4L4K

47.0

10.0

22.0

47.0

2.2

22.0

4.7

10.0

2.2

10.0

47.0

4.7

2.2

1.0

10.0

47.0

2.2

10.0

22.0

10.0

47.0

10.0

Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%

Note 3. Mounted on ceramic substrate of 3.0 cm²x 0.64 mm

<R>

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16495EJ5V0DS00 (5th edition)

Date Published April 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...22

中文翻译

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与KA4F3P相关器件

型号	品牌	获取价格	描述	数据表
KA4F3P-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3P-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3P-AZ	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4F3P-T1-A	RENESAS	获取价格	KA4F3P-T1-A
KA4F3P-T1-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3P-T2-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3R	NEC	获取价格	RESISTOR BUILT-IN TYPE NPN TRANSISTOR
KA4F3R	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4F3R-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3R-AZ	NEC	获取价格	暂无描述

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