Datasheet > KA4A4P-T1

KA4A4P-T1

更新时间： 2024-11-06 19:41:15

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体管
页数	文件大小	规格书
22页	336K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75

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中文翻译

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技术参数
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KA4A4P-T1 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	85	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

KA4A4P-T1 数据手册

DATA SHEET

SILICON TRANSISTOR

KA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

FEATURES

PACKAGE DRAWING (Unit: mm)

• Compact package

• Resistors built-in type

• Complementary to KN4xxx

+0.1

–0

0.3

+0.1

–0.05

0.15

ORDERING INFORMATION

PART NUMBER

0 to 0.1

PACKAGE

+0.1

–0

0.2

KA4xxx

SC-75 (USM)

0.6

0.05

0.5

0.75

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

1.0

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

VCBO

V^CEO

V^EBO

I^C

1.6 ± 0.1

EQUIVALENT CIRCUIT

PIN CONNECTION

1: Emitter

Note1

0.1

Collector Current (pulse) ^Note2IC(pulse)

0.2

2: Base

Total Power Dissipation ^Note3

Junction Temperature

Storage Temperature

T^j

0.2

°C

3: Collector

150

T^stg

–55 to +150

Note 1.

PART NUMBER

VEBO

MARK

R¹

R²

PART NUMBER

VEBO

MARK

R¹

R²

(V)

(kΩ)

10.0

22.0

47.0

4.7

(kΩ)

(V)

(kΩ)

KA4A4M

KA4F4M

KA4L4M

KA4L3M

KA4L3N

KA4L3Z

KA4A3Q

KA4A4P

KA4F4N

10.0

22.0

47.0

4.7

KA4L4L

KA4A4Z

KA4F4Z

KA4L4Z

KA4F3M

KA4F3P

KA4F3R

KA4A4L

KA4L4K

47.0

10.0

22.0

47.0

2.2

22.0

4.7

10.0

2.2

10.0

47.0

4.7

2.2

1.0

10.0

47.0

2.2

10.0

22.0

10.0

47.0

10.0

Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%

Note 3. Mounted on ceramic substrate of 3.0 cm²x 0.64 mm

<R>

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16495EJ5V0DS00 (5th edition)

Date Published April 2006 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6 7...22

中文翻译

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与KA4A4P-T1相关器件

型号	品牌	获取价格	描述	数据表
KA4A4P-T1-A	RENESAS	获取价格	KA4A4P-T1-A
KA4A4P-T1-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4P-T2	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4P-T2-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4Z	NEC	获取价格	RESISTOR BUILT-IN TYPE NPN TRANSISTOR
KA4A4Z	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4Z-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4Z-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4Z-AZ	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4Z-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC

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