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KA4A4P-T1

更新时间： 2024-11-18 19:41:15
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体管
页数 文件大小 规格书
22页 336K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75

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KA4A4P-T1 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：,Reach Compliance Code：unknown
风险等级：5.92最大集电极电流 (IC)：0.1 A
最小直流电流增益 (hFE)：85元件数量：1
极性/信道类型：NPN最大功率耗散 (Abs)：0.2 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

KA4A4P-T1 数据手册

 浏览型号KA4A4P-T1的Datasheet PDF文件第2页浏览型号KA4A4P-T1的Datasheet PDF文件第3页浏览型号KA4A4P-T1的Datasheet PDF文件第4页浏览型号KA4A4P-T1的Datasheet PDF文件第5页浏览型号KA4A4P-T1的Datasheet PDF文件第6页浏览型号KA4A4P-T1的Datasheet PDF文件第7页 
DATA SHEET  
SILICON TRANSISTOR  
KA4xxx  
RESISTOR BUILT-IN TYPE NPN TRANSISTOR  
FEATURES  
PACKAGE DRAWING (Unit: mm)  
• Compact package  
• Resistors built-in type  
• Complementary to KN4xxx  
+0.1  
–0  
0.3  
+0.1  
–0.05  
0.15  
3
ORDERING INFORMATION  
PART NUMBER  
0 to 0.1  
PACKAGE  
2
1
+0.1  
–0  
0.2  
KA4xxx  
SC-75 (USM)  
0.6  
0.05  
0.5  
0.5  
0.75  
±
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
1.0  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current (DC)  
VCBO  
VCEO  
VEBO  
IC  
60  
50  
V
V
1.6 ± 0.1  
EQUIVALENT CIRCUIT  
PIN CONNECTION  
1: Emitter  
Note1  
0.1  
V
A
3
Collector Current (pulse) Note2 IC(pulse)  
0.2  
A
2: Base  
Total Power Dissipation Note3  
Junction Temperature  
Storage Temperature  
PT  
Tj  
0.2  
W
°C  
°C  
2
3: Collector  
150  
R1  
Tstg  
–55 to +150  
R2  
1
Note 1.  
PART NUMBER  
VEBO  
MARK  
R1  
R2  
PART NUMBER  
VEBO  
MARK  
R1  
R2  
(V)  
(kΩ)  
10.0  
22.0  
47.0  
4.7  
(kΩ)  
(V)  
(kΩ)  
(kΩ)  
KA4A4M  
KA4F4M  
KA4L4M  
KA4L3M  
KA4L3N  
KA4L3Z  
KA4A3Q  
KA4A4P  
KA4F4N  
10  
10  
10  
10  
5
A4  
B4  
C4  
D4  
E4  
F4  
G4  
H4  
X4  
10.0  
22.0  
47.0  
4.7  
KA4L4L  
KA4A4Z  
KA4F4Z  
KA4L4Z  
KA4F3M  
KA4F3P  
KA4F3R  
KA4A4L  
KA4L4K  
15  
5
K4  
Y4  
Z4  
N4  
P4  
Q4  
R4  
S4  
T4  
47.0  
10.0  
22.0  
47.0  
2.2  
22.0  
5
5
4.7  
10.0  
10  
5
2.2  
10.0  
47.0  
4.7  
5
4.7  
2.2  
5
1.0  
10.0  
47.0  
47.0  
5
2.2  
5
10.0  
22.0  
15  
25  
10.0  
47.0  
5
10.0  
Note 2. PW ≤ 10 ms, Duty Cycle ≤ 50%  
Note 3. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm  
<R>  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D16495EJ5V0DS00 (5th edition)  
Date Published April 2006 NS CP(K)  
Printed in Japan  
2002  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
1234567...22

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与KA4A4P-T1相关器件

型号 品牌 获取价格 描述 数据表
KA4A4P-T1-A RENESAS

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 		KA4A4P-T1-A
KA4A4P-T1-AT RENESAS

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4P-T2 RENESAS

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4P-T2-A RENESAS

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4Z NEC

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 		RESISTOR BUILT-IN TYPE NPN TRANSISTOR
KA4A4Z RENESAS

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 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4Z-A RENESAS

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4Z-AT RENESAS

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 		PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4A4Z-AZ RENESAS

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 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4A4Z-AZ NEC

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 		Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC

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