KA4F3M

更新时间： 2024-11-05 22:26:43

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管光电二极管
页数	文件大小	规格书
22页	373K
描述
RESISTOR BUILT-IN TYPE NPN TRANSISTOR

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中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

KA4F3M 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	USM, SC-75, 3 PIN	Reach Compliance Code：	compliant
风险等级：	5.85	Is Samacsys：	N
其他特性：	BUILT IN BIAS RESISTOR RATIO IS 1	最大集电极电流 (IC)：	0.1 A
集电极-发射极最大电压：	50 V	配置：	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)：	50	JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	TIN LEAD	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管元件材料：	SILICON	Base Number Matches：	1

KA4F3M 数据手册

DATA SHEET

SILICON TRANSISTOR

KA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

FEATURES

PACKAGE DRAWING (Unit: mm)

• Compact package

• Resistors built-in type

• Complementary to KN4xxx

+0.1

–0

0.3

+0.1

0.15

–0.05

ORDERING INFORMATION

PART NUMBER

0 to 0.1

PACKAGE

+0.1

0.2

–0

KA4xxx

SC-75 (USM)

0.6

0.5

0.75 0.05

1.0

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

1.6 0.1

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current (DC)

Collector Current (pulse) ^Note

Total Power Dissipation

Junction Temperature

VCBO

V^CEO

V^EBO

I^C

IC(pulse)

P^T

0.1

0.2

°C

EQUIVALENT CIRCUIT

PIN CONNECTION

1: Emitter

2: Base

0.2

150

3: Collector

T^j

Storage Temperature

T^stg

–55 to +150

Note PW ≤ 10 ms, Duty Cycle ≤ 50%

PART NUMBER

KA4A4M

KA4F4M

KA4L4M

KA4L3M

KA4L3N

MARK

UNIT

kΩ

PART NUMBER

KA4L4L

MARK

UNIT

kΩ

10.0

22.0

47.0

4.7

10.0

22.0

47.0

4.7

47.0

10.0

22.0

47.0

2.2

22.0

KA4A4Z

KA4F4Z

KA4L4Z

4.7

10.0

KA4F3M

KA4F3P

KA4F3R

KA4A4L

2.2

10.0

47.0

4.7

KA4L3Z

4.7

2.2

KA4A3Q

KA4A4P

KA4F4N

1.0

10.0

47.0

2.2

10.0

22.0

10.0

47.0

KA4L4K

10.0

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

The mark

shows major revised points.

Document No. D16495EJ3V0DS00 (3rd edition)

Date Published October 2004 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7...22

中文翻译

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与KA4F3M相关器件

型号	品牌	获取价格	描述	数据表
KA4F3M-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3M-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3M-AZ	NEC	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4F3M-AZ	RENESAS	获取价格	100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, USM, SC-75, 3 PIN
KA4F3M-T1-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3P	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC
KA4F3P	NEC	获取价格	RESISTOR BUILT-IN TYPE NPN TRANSISTOR
KA4F3P-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3P-AT	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,50V V(BR)CEO,100MA I(C),SC-75
KA4F3P-AZ	RENESAS	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, USM, SC

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