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K9S1208V0M-SSB00 PDF预览

K9S1208V0M-SSB00

更新时间: 2024-11-21 21:03:15
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
37页 657K
描述
Flash Card, 64MX8, 35ns, CARD-22

K9S1208V0M-SSB00 技术参数

生命周期:Obsolete零件包装代码:CARD
包装说明:CARD-22针数:22
Reach Compliance Code:unknownECCN代码:3A991.B.1.A
HTS代码:8542.32.00.51风险等级:5.84
最长访问时间:35 ns其他特性:CONTAINS ADDITIONAL 16M BIT NAND FLASH
JESD-30 代码:R-XXMA-X22内存密度:536870912 bit
内存集成电路类型:FLASH CARD内存宽度:8
功能数量:1端子数量:22
字数:67108864 words字数代码:64000000
工作模式:ASYNCHRONOUS最高工作温度:55 °C
最低工作温度:组织:64MX8
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
编程电压:2.7 V认证状态:Not Qualified
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:NO
技术:CMOS温度等级:COMMERCIAL
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
类型:NAND TYPEBase Number Matches:1

K9S1208V0M-SSB00 数据手册

 浏览型号K9S1208V0M-SSB00的Datasheet PDF文件第2页浏览型号K9S1208V0M-SSB00的Datasheet PDF文件第3页浏览型号K9S1208V0M-SSB00的Datasheet PDF文件第4页浏览型号K9S1208V0M-SSB00的Datasheet PDF文件第5页浏览型号K9S1208V0M-SSB00的Datasheet PDF文件第6页浏览型号K9S1208V0M-SSB00的Datasheet PDF文件第7页 
K9D1G08V0M/A-SSB0  
K9S1208V0M/A-SSB0  
TM  
SmartMedia  
Document Title  
64MB & 128MB SmartMediaTM Card  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
0.1  
Initial issue  
Mar. 30th 2001  
Apr. 7th 2001  
Preliminary  
1. Changed DC characteristics  
Parameter  
Min  
Typ  
10  
Max  
Unit  
Sequential Read  
Operating  
-
-
-
20->30  
20->30  
20->30  
Current  
Program  
10  
mA  
Erase  
10  
2. Added tDBSY parameter  
3. Removed Copy-Back program command  
4. Changed AC characteristics  
Parameter  
Symbol  
Min  
Max  
Unit  
ALE to RE Delay  
( ID read )  
tAR1  
100->10  
-
ns  
0.2  
Sep. 7th 2001  
1.Powerup sequence is added  
Recovery time of minimum 1ms is required before internal circuit gets  
ready for any command sequences  
~ 2.5V  
~ 2.5V  
V
CC  
Hgh  
WP  
WE  
1ms  
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.  
3. Changed AC characteristics  
(Before)  
Parameter  
Symbol  
tAR1  
Min  
Max  
-
Unit  
ALE to RE Delay (ID read)  
ALE to RE Delay (Read  
RE Low to Status Output  
CE Low to Status Output  
RE access time(Read ID)  
100  
tAR2  
100  
-
ns  
tRSTO  
tCSTO  
tREADID  
-
-
-
35  
45  
35  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

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