Datasheet > K9S2808V0A-SSB0

K9S2808V0A-SSB0

更新时间： 2024-01-20 14:31:40

品牌	Logo	应用领域
三星 - SAMSUNG		内存集成电路
页数	文件大小	规格书
26页	348K
描述
Flash Card, 16MX8, 35ns, SSFDC CARD-22

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技术参数
数据手册

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K9S2808V0A-SSB0 技术参数

生命周期：	Obsolete	零件包装代码：	CARD
包装说明：	SSFDC CARD-22	针数：	22
Reach Compliance Code：	unknown	ECCN代码：	3A991.B.1.A
HTS代码：	8542.32.00.51	风险等级：	5.84
最长访问时间：	35 ns	JESD-30 代码：	X-XXMA-X22
内存密度：	134217728 bit	内存集成电路类型：	FLASH CARD
内存宽度：	8	功能数量：	1
端子数量：	22	字数：	16777216 words
字数代码：	16000000	工作模式：	ASYNCHRONOUS
最高工作温度：	55 °C	最低工作温度：
组织：	16MX8	封装主体材料：	UNSPECIFIED
封装形状：	UNSPECIFIED	封装形式：	MICROELECTRONIC ASSEMBLY
并行/串行：	PARALLEL	编程电压：	2.7 V
认证状态：	Not Qualified	最大供电电压 (Vsup)：	3.6 V
最小供电电压 (Vsup)：	2.7 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	NO	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	UNSPECIFIED
端子位置：	UNSPECIFIED	类型：	NAND TYPE
Base Number Matches：	1

K9S2808V0A-SSB0 数据手册

K9S2808V0A-SSB0

SmartMedia

Document Title

16M x 8 Bit SmartMedia^TMCard

Revision History

Revision No History

Draft Date

Remark

0.0

0.1

Initial issue.

April 10th 1999

July 23th 1999

Advanced

Information

1) Revised real-time map-out algorithm(refer to technical notes)

2) Changed voltage-density model marking method on SmartMedia

0.2

0.3

Changed device name

- SMFV016A -> K9S2808V0A-SSB0

Sep. 15th 1999

May 15th 2000

Advanced

Information

1. Changed Sequential Row Read opera tion

Preliminary

-The Sequential Read 1 and 2 operation is allowed only within a block.

2. Changed invalid block(s) marking method prior to shipping

- Physical format standard specifies that block status is defined by the

6th byte in the spare area. Samsung makes sure that the first page of

every invalid block has 00h data at the column address of 517(4MB

SmartMedia and higher densities) or 261(2MB SmartMedia).

--> Physical format standard by SSFDC Forum specifies that for the

invalid blocks the 6th byte in the spare area (column address 517 for

4MB SmartMedia and higher densities, 261 for 2MB SmartMedia,

respectively) contains two or more "0" bits to indicate a invalid block.

3. Changed Endurance : 1 million -> 100K Program/Erase Cycles

1. Changed minor texts

0.4

Final

July 17th 2000

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

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