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K9K1208U0A-YCB0 PDF预览

K9K1208U0A-YCB0

更新时间: 2024-11-28 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
27页 358K
描述
64M x 8 Bit NAND Flash Memory

K9K1208U0A-YCB0 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.72最长访问时间:35 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48JESD-609代码:e0
长度:18.4 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:8
功能数量:1部门数/规模:4K
端子数量:48字数:67108864 words
字数代码:64000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:64MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:512 words并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3.3 V
编程电压:2.7 V认证状态:Not Qualified
就绪/忙碌:YES座面最大高度:1.2 mm
部门规模:16K最大待机电流:0.00005 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED切换位:NO
类型:NAND TYPE宽度:12 mm
Base Number Matches:1

K9K1208U0A-YCB0 数据手册

 浏览型号K9K1208U0A-YCB0的Datasheet PDF文件第2页浏览型号K9K1208U0A-YCB0的Datasheet PDF文件第3页浏览型号K9K1208U0A-YCB0的Datasheet PDF文件第4页浏览型号K9K1208U0A-YCB0的Datasheet PDF文件第5页浏览型号K9K1208U0A-YCB0的Datasheet PDF文件第6页浏览型号K9K1208U0A-YCB0的Datasheet PDF文件第7页 
K9K1208U0A-YCB0, K9K1208U0A-YIB0  
FLASH MEMORY  
Document Title  
64M x 8 Bit NAND Flash Memory  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
1. Initial issue  
Dec. 6th 2000  
Preliminary  
- Changed /SE(pin # 6, Spare Area Enable) pin to N.C ( No Connection).  
So, /SE pin is don’t-cared regardless of external logic input level and is  
fixed as low internally.  
1. Changed plane address in Copy-Back Program  
Dec. 28th 2000  
Jan. 17th 2001  
0.1  
0.2  
- A14, the plane address, of source and destination page address must be  
the same. => A14 and A25, the plane address, of source and destination  
page address must be the same.  
Final  
1. In addition, explain WE function in pin description  
- The WE must be held high when outputs are activated.  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

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