5秒后页面跳转
捷配首页

Datasheet > K9K1208U0M
K9K1208U0M PDF预览

K9K1208U0M

更新时间： 2024-11-28 22:26:03
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
26页 353K
描述
64M x 8 Bit NAND Flash Memory

阅读下载

中文翻译

获取价格

K9K1208U0M 数据手册

 浏览型号K9K1208U0M的Datasheet PDF文件第2页浏览型号K9K1208U0M的Datasheet PDF文件第3页浏览型号K9K1208U0M的Datasheet PDF文件第4页浏览型号K9K1208U0M的Datasheet PDF文件第5页浏览型号K9K1208U0M的Datasheet PDF文件第6页浏览型号K9K1208U0M的Datasheet PDF文件第7页 
K9K1208U0M-YCB0, K9K1208U0M-YIB0  
FLASH MEMORY  
Document Title  
64M x 8 Bit NAND Flash Memory  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
1. Initial issue  
June 19th 2000 Preliminary  
- The followings are disprepancy items between K9K5608U0M (256Mb  
DDP) and K9K1208U0M (512Mb DDP).  
AC Characteristics  
Read Cycle Time (tRC)  
Write Cycle Time (tWC)  
WE High hold Time (tWH)  
Data Hold Time (tDH)  
K9K5608U0M  
Min. 50ns  
Min. 50ns  
Min. 15ns  
Min. 10ns  
Min. 15ns  
K9K1208U0M  
Min. 60ns  
Min. 60ns  
Min. 25ns  
Min. 15ns  
Min. 25ns  
RE High Hold Time (tREH)  
June 24th 2000 Preliminary  
July 17th 2000 Final  
Nov. 20th 2000  
1. Changed Input / Output Capacitance  
- Input / Output Capacitance (Max.) : 20 pF --> 30pF  
- Input Capacitance (Max.) : 20 pF --> 30pF  
0.1  
1. Changed SE pin description  
- SE is recommended to coupled to GND or Vcc and should not be  
toggled during reading or programming.  
0.2  
0.3  
1. Changed don’t care mode in address cycles  
- *X can be "High" or "Low" => *L must be set to "Low"  
2. Explain how pointer operation works in detail.  
3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)  
- The SE input controls the access of the spare area. When SE is high,  
the spare area is not accessible for reading or programming. SE is rec  
ommended to be coupled to GND or Vcc and should not be toggled  
during reading or programming.  
=> Connect this input pin to GND or set to static low state unless the  
sequential read mode excluding spare area is used.  
4. Updated operation for tRST timing  
- If reset command(FFh) is written at Ready state, the device goes into  
Busy for maximum 5us.  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1
1234567...26

中文翻译

下载PDF

与K9K1208U0M相关器件

型号 品牌 获取价格 描述 数据表
K9K1208U0M-YCB0 SAMSUNG

获取价格

 		64M x 8 Bit NAND Flash Memory
K9K1208U0M-YIB0 SAMSUNG

获取价格

 		64M x 8 Bit NAND Flash Memory
K9K1216D0C SAMSUNG

获取价格

 		64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1216D0C-DCB0 SAMSUNG

获取价格

 		IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-DIB00 SAMSUNG

获取价格

 		32MX16 FLASH 2.7V PROM, 45ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9K1216D0C-GCB0 SAMSUNG

获取价格

 		IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-GCB00 SAMSUNG

获取价格

 		Flash, 32MX16, 30ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
K9K1216D0C-GIB0 SAMSUNG

获取价格

 		IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-GIB00 SAMSUNG

获取价格

 		Flash, 32MX16, 30ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
K9K1216D0C-GIB0T SAMSUNG

获取价格

 		IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC

与K9K1208U0M相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证