K9K1208U0M-YIB0

更新时间： 2024-09-29 22:09:39

品牌	Logo	应用领域
三星 - SAMSUNG		闪存
页数	文件大小	规格书
26页	353K
描述
64M x 8 Bit NAND Flash Memory

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中文翻译

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数据手册

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K9K1208U0M-YIB0 数据手册

K9K1208U0M-YCB0, K9K1208U0M-YIB0

FLASH MEMORY

Document Title

64M x 8 Bit NAND Flash Memory

Revision History

Revision No History

Draft Date

Remark

0.0

1. Initial issue

June 19th 2000 Preliminary

- The followings are disprepancy items between K9K5608U0M (256Mb

DDP) and K9K1208U0M (512Mb DDP).

AC Characteristics

Read Cycle Time (tRC)

Write Cycle Time (tWC)

WE High hold Time (tWH)

Data Hold Time (tDH)

K9K5608U0M

Min. 50ns

Min. 15ns

Min. 10ns

Min. 15ns

K9K1208U0M

Min. 60ns

Min. 25ns

Min. 15ns

Min. 25ns

RE High Hold Time (tREH)

June 24th 2000 Preliminary

July 17th 2000 Final

Nov. 20th 2000

1. Changed Input / Output Capacitance

- Input / Output Capacitance (Max.) : 20 pF --> 30pF

- Input Capacitance (Max.) : 20 pF --> 30pF

0.1

1. Changed SE pin description

- SE is recommended to coupled to GND or Vcc and should not be

toggled during reading or programming.

0.2

0.3

1. Changed don’t care mode in address cycles

- *X can be "High" or "Low" => *L must be set to "Low"

2. Explain how pointer operation works in detail.

3. Renamed GND input (pin # 6) on behalf of SE (pin # 6)

- The SE input controls the access of the spare area. When SE is high,

the spare area is not accessible for reading or programming. SE is rec

ommended to be coupled to GND or Vcc and should not be toggled

during reading or programming.

=> Connect this input pin to GND or set to static low state unless the

sequential read mode excluding spare area is used.

4. Updated operation for tRST timing

- If reset command(FFh) is written at Ready state, the device goes into

Busy for maximum 5us.

Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.

http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the

right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you

have any questions, please contact the SAMSUNG branch office near your office.

12 3 4 5 6 7...26

中文翻译

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与K9K1208U0M-YIB0相关器件

型号	品牌	获取价格	描述	数据表
K9K1216D0C	SAMSUNG	获取价格	64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
K9K1216D0C-DCB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-DIB00	SAMSUNG	获取价格	32MX16 FLASH 2.7V PROM, 45ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9K1216D0C-GCB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-GCB00	SAMSUNG	获取价格	Flash, 32MX16, 30ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
K9K1216D0C-GIB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-GIB00	SAMSUNG	获取价格	Flash, 32MX16, 30ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
K9K1216D0C-GIB0T	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC
K9K1216D0C-HCB00	SAMSUNG	获取价格	32MX16 FLASH 2.7V PROM, 45ns, PBGA63, 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9K1216D0C-HIB0	SAMSUNG	获取价格	IC,EEPROM,NAND FLASH,32MX16,CMOS,BGA,63PIN,PLASTIC

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