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K9F1G16D0M-PCB0 PDF预览

K9F1G16D0M-PCB0

更新时间: 2024-11-22 06:12:23
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管内存集成电路
页数 文件大小 规格书
40页 726K
描述
Flash, 64MX16, 30ns, PDSO48,

K9F1G16D0M-PCB0 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:TSSOP, TSSOP48,.8,20Reach Compliance Code:compliant
风险等级:5.84最长访问时间:30 ns
命令用户界面:YES数据轮询:NO
JESD-30 代码:R-PDSO-G48内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:16
部门数/规模:1K端子数量:48
字数:67108864 words字数代码:64000000
最高工作温度:70 °C最低工作温度:
组织:64MX16封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装等效代码:TSSOP48,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
页面大小:1K words并行/串行:PARALLEL
电源:2.7 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:64K
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.02 mA标称供电电压 (Vsup):2.7 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子形式:GULL WING
端子节距:0.5 mm端子位置:DUAL
切换位:NO

K9F1G16D0M-PCB0 数据手册

 浏览型号K9F1G16D0M-PCB0的Datasheet PDF文件第2页浏览型号K9F1G16D0M-PCB0的Datasheet PDF文件第3页浏览型号K9F1G16D0M-PCB0的Datasheet PDF文件第4页浏览型号K9F1G16D0M-PCB0的Datasheet PDF文件第5页浏览型号K9F1G16D0M-PCB0的Datasheet PDF文件第6页浏览型号K9F1G16D0M-PCB0的Datasheet PDF文件第7页 
K9F1G08Q0M K9F1G16Q0M  
K9F1G08D0M  
K9F1G16D0M  
K9F1G08U0M K9F1G16U0M  
FLASH MEMORY  
Document Title  
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory  
Revision History  
Revision No History  
Draft Date  
July. 5. 2001  
Nov. 5. 2001  
Remark  
0.0  
0.1  
1. Initial issue  
Advance  
1. Iol(R/B) of 1.8V is changed.  
- min. value : 7mA --> 3mA  
- Typ. value : 8mA --> 4mA  
2. AC parameter is changed.  
tRP(min.) : 30ns --> 25ns  
3. A recovery time of minimum 1ms is required before internal circuit gets  
ready for any command sequences as shown in Figure 17.  
Dec. 4. 2001  
---> A recovery time of minimum 10ms is required before internal circuit gets  
ready for any command sequences as shown in Figure 17.  
0.2  
0.3  
1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)  
is fixed.  
1. tAR1, tAR2 are merged to tAR.(Page11)  
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns  
(After revision) min. tAR = 10ns  
Apr. 25. 2002  
2. min. tCLR is changed from 50ns to 10ns.(Page11)  
3. min. tREA is changed from 35ns to 30ns.(Page11)  
4. min. tWC is changed from 50ns to 45ns.(Page11)  
5. tRHZ is devided into tRHZ and tOH.(Page11)  
- tRHZ : RE High to Output Hi-Z  
- tOH : RE High to Output Hold  
6. tCHZ is devided into tCHZ and tOH.(Page11)  
- tCHZ : CE High to Output Hi-Z  
- tOH : CE High to Output Hold  
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)  
2. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 36)  
Nov. 22.2002  
0.4  
1. The min. Vcc value 1.8V devices is changed.  
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V  
0.5  
0.6  
Mar. 6.2003  
Mar. 13.2003  
Pb-free Package is added.  
K9F1G08U0M-FCB0,FIB0  
K9F1G08Q0M-PCB0,PIB0  
K9F1G08U0M-PCB0,PIB0  
K9F1G16U0M-PCB0,PIB0  
K9F1G16Q0M-PCB0,PIB0  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

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