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K9F1G16D0M-PIB0

更新时间： 2024-11-25 06:27:39
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管
页数 文件大小 规格书
40页 726K
描述
Flash, 64MX16, 30ns, PDSO48,

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K9F1G16D0M-PIB0 数据手册

 浏览型号K9F1G16D0M-PIB0的Datasheet PDF文件第2页浏览型号K9F1G16D0M-PIB0的Datasheet PDF文件第3页浏览型号K9F1G16D0M-PIB0的Datasheet PDF文件第4页浏览型号K9F1G16D0M-PIB0的Datasheet PDF文件第5页浏览型号K9F1G16D0M-PIB0的Datasheet PDF文件第6页浏览型号K9F1G16D0M-PIB0的Datasheet PDF文件第7页 
K9F1G08Q0M K9F1G16Q0M  
K9F1G08D0M  
K9F1G16D0M  
K9F1G08U0M K9F1G16U0M  
FLASH MEMORY  
Document Title  
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory  
Revision History  
Revision No History  
Draft Date  
July. 5. 2001  
Nov. 5. 2001  
Remark  
0.0  
0.1  
1. Initial issue  
Advance  
1. Iol(R/B) of 1.8V is changed.  
- min. value : 7mA --> 3mA  
- Typ. value : 8mA --> 4mA  
2. AC parameter is changed.  
tRP(min.) : 30ns --> 25ns  
3. A recovery time of minimum 1ms is required before internal circuit gets  
ready for any command sequences as shown in Figure 17.  
Dec. 4. 2001  
---> A recovery time of minimum 10ms is required before internal circuit gets  
ready for any command sequences as shown in Figure 17.  
0.2  
0.3  
1. ALE status fault in ’Random data out in a page’ timing diagram(page 19)  
is fixed.  
1. tAR1, tAR2 are merged to tAR.(Page11)  
(Before revision) min. tAR1 = 10ns , min. tAR2 = 50ns  
(After revision) min. tAR = 10ns  
Apr. 25. 2002  
2. min. tCLR is changed from 50ns to 10ns.(Page11)  
3. min. tREA is changed from 35ns to 30ns.(Page11)  
4. min. tWC is changed from 50ns to 45ns.(Page11)  
5. tRHZ is devided into tRHZ and tOH.(Page11)  
- tRHZ : RE High to Output Hi-Z  
- tOH : RE High to Output Hold  
6. tCHZ is devided into tCHZ and tOH.(Page11)  
- tCHZ : CE High to Output Hi-Z  
- tOH : CE High to Output Hold  
1. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 35)  
2. Add the data protection Vcc guidence for 1.8V device - below about  
1.1V. (Page 36)  
Nov. 22.2002  
0.4  
1. The min. Vcc value 1.8V devices is changed.  
K9F1GXXQ0M : Vcc 1.65V~1.95V --> 1.70V~1.95V  
0.5  
0.6  
Mar. 6.2003  
Mar. 13.2003  
Pb-free Package is added.  
K9F1G08U0M-FCB0,FIB0  
K9F1G08Q0M-PCB0,PIB0  
K9F1G08U0M-PCB0,PIB0  
K9F1G16U0M-PCB0,PIB0  
K9F1G16Q0M-PCB0,PIB0  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
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与K9F1G16D0M-PIB0相关器件

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K9F1G16D0M-YIB0 SAMSUNG

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 		Flash, 64MX16, 30ns, PDSO48,
K9F1G16Q0M SAMSUNG

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 		128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9F1G16Q0M-PCB0 SAMSUNG

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 		1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PCB00 SAMSUNG

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 		Flash, 64MX16, 60ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F1G16Q0M-PIB0 SAMSUNG

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 		1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-PIB00 SAMSUNG

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 		Flash, 64MX16, 60ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F1G16Q0M-YCB0 SAMSUNG

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 		1Gb Gb 1.8V NAND Flash Errata
K9F1G16Q0M-YCB00 SAMSUNG

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 		Flash, 64MX16, 60ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F1G16Q0M-YIB0 SAMSUNG

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 		1Gb Gb 1.8V NAND Flash Errata
K9F1G16U0M SAMSUNG

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 		128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

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