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K8D6316UBM-LC080 PDF预览

K8D6316UBM-LC080

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路闪存
页数 文件大小 规格书
48页 1488K
描述
Flash, 4MX16, 80ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48

K8D6316UBM-LC080 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA48,6X8,32
针数:48Reach Compliance Code:compliant
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.7最长访问时间:80 ns
备用内存宽度:8启动块:BOTTOM
命令用户界面:YES通用闪存接口:YES
数据轮询:YESJESD-30 代码:R-PBGA-B48
JESD-609代码:e1长度:9 mm
内存密度:67108864 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:2
功能数量:1部门数/规模:8,127
端子数量:48字数:4194304 words
字数代码:4000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:4MX16封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA48,6X8,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行:PARALLEL峰值回流温度(摄氏度):260
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified就绪/忙碌:YES
座面最大高度:1 mm部门规模:8K,64K
最大待机电流:0.00003 A子类别:Flash Memories
最大压摆率:0.05 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:TIN SILVER COPPER
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
切换位:YES类型:NOR TYPE
宽度:6 mm

K8D6316UBM-LC080 数据手册

 浏览型号K8D6316UBM-LC080的Datasheet PDF文件第2页浏览型号K8D6316UBM-LC080的Datasheet PDF文件第3页浏览型号K8D6316UBM-LC080的Datasheet PDF文件第4页浏览型号K8D6316UBM-LC080的Datasheet PDF文件第5页浏览型号K8D6316UBM-LC080的Datasheet PDF文件第6页浏览型号K8D6316UBM-LC080的Datasheet PDF文件第7页 
K8D6x16UTM / K8D6x16UBM  
NOR FLASH MEMORY  
Document Title  
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
1.0  
1.1  
Initial Draft  
January 10, 2002  
Preliminary  
Final Specification  
May 22, 2002  
Final  
Revised  
June 18, 2003  
- Release the stand-by current from typ. 5uA(max. 18uA) to typ.  
10uA(max. 30uA).  
1.2  
Not support 48TSOP1 Package  
November 18, 2003  
Not support 16M/16M BANK partition  
1.3  
1.4  
1.5  
1.6  
Support 48TSOP1 Package  
July 22, 2004  
Support 48TSOP1 Lead Free Package  
Support 48FBGA Leaded/Lead Free Package  
September 16, 2004  
March 16, 2005  
"Asynchronous mode may not support read following four sequential September 08, 2006  
invalid read condition within 200ns." is added  
1
Revision 1.6  
September, 2006  

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