是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TSOP1 | 包装说明: | 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.63 | Is Samacsys: | N |
最长访问时间: | 70 ns | 备用内存宽度: | 8 |
启动块: | BOTTOM | JESD-30 代码: | R-PDSO-G48 |
长度: | 18.4 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 2 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP1 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, THIN PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1.2 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | GULL WING | 端子节距: | 0.5 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
类型: | NOR TYPE | 宽度: | 12 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8D6316UBM-PI08 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-PI080 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBMPI0800 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBM-PI08T | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PDSO56 | |
K8D6316UBM-PI09 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-PI090 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBMPI0900 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBM-PI09T | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO56 | |
K8D6316UBM-TC07 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-TC070 | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, TBGA-48 |