是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA48,6X8,32 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 90 ns |
备用内存宽度: | 8 | 启动块: | BOTTOM |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | YES | JESD-30 代码: | R-PBGA-B48 |
内存密度: | 67108864 bit | 内存集成电路类型: | FLASH |
内存宽度: | 16 | 部门数/规模: | 8,127 |
端子数量: | 48 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 4MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA48,6X8,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 并行/串行: | PARALLEL |
电源: | 3/3.3 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 部门规模: | 8K,64K |
最大待机电流: | 0.00003 A | 子类别: | Flash Memories |
最大压摆率: | 0.05 mA | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 0.8 mm |
端子位置: | BOTTOM | 切换位: | YES |
类型: | NOR TYPE |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8D6316UBM-PC07 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBMPC0700 | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBM-PC08 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-PC080 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBM-PC08T | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PDSO56 | |
K8D6316UBM-PC09 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-PC090 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBMPC0900 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48 | |
K8D6316UBM-PC09T | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PDSO56 | |
K8D6316UBM-PI07 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |