是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | VFBGA, |
针数: | 48 | Reach Compliance Code: | compliant |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.74 | 最长访问时间: | 80 ns |
备用内存宽度: | 8 | 启动块: | BOTTOM |
JESD-30 代码: | R-PBGA-B48 | JESD-609代码: | e1 |
长度: | 9 mm | 内存密度: | 67108864 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 2 | 功能数量: | 1 |
端子数量: | 48 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | TIN SILVER COPPER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 类型: | NOR TYPE |
宽度: | 6 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K8D6316UBM-LC08T | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PBGA48 | |
K8D6316UBM-LC09 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-LC090 | SAMSUNG |
获取价格 |
Flash, 4MX16, 90ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48 | |
K8D6316UBM-LI07 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBMLI0700 | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48 | |
K8D6316UBM-LI07T | SAMSUNG |
获取价格 |
Flash, 4MX16, 70ns, PBGA48 | |
K8D6316UBM-LI08 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory | |
K8D6316UBM-LI080 | SAMSUNG |
获取价格 |
Flash, 4MX16, 80ns, PBGA48, 6 X 9 MM, 0.80 MM PITCH, LEAD FREE, TBGA-48 | |
K8D6316UBM-LI08T | SAMSUNG |
获取价格 |
暂无描述 | |
K8D6316UBM-LI09 | SAMSUNG |
获取价格 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory |