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K7N803601A-TC130 PDF预览

K7N803601A-TC130

更新时间: 2024-11-23 14:51:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
20页 459K
描述
ZBT SRAM, 256KX36, 4.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

K7N803601A-TC130 技术参数

生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.3
Is Samacsys:N最长访问时间:4.2 ns
JESD-30 代码:R-PQFP-G100长度:20 mm
内存密度:9437184 bit内存集成电路类型:ZBT SRAM
内存宽度:36功能数量:1
端子数量:100字数:262144 words
字数代码:256000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:256KX36封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD宽度:14 mm
Base Number Matches:1

K7N803601A-TC130 数据手册

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K7N803601A  
K7N801801A  
256Kx36 & 512Kx18 Pipelined NtRAMTM  
Document Title  
256Kx36-Bit Pipelined NtRAMTM  
Revision History  
Rev. No.  
History  
Draft Date  
Remark  
0.0  
1.0  
1. Initial document.  
May. 24. 2000  
July. 03. 2000  
Preliminary  
Final  
1. Final spec Release.  
2. Add 119BGA(7x17 Ball Grid Array Package)  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.  
- 1 -  
July 2000  
Rev 1.0  

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