Datasheet > K7N803601M-TC20

K7N803601M-TC20

更新时间： 2024-11-20 07:57:39

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
17页	389K
描述
ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

K7N803601M-TC20 数据手册

K7N803601M

K7N801801M

256Kx36 & 512Kx18 Pipelined NtRAM^TM

Document Title

256Kx36-Bit Pipelined NtRAM^TM

Revision History

Rev. No.

History

Draft Date

Remark

0.0

0.1

1. Initial document.

June. 09. 1998

Aug. 19. 1998

Preliminary

1. Changed DC parameters

ICC; from 450mA to 420mA at 150MHZ.

ISB1; from 10mA to 20mA, ISB2 ; from 10mA to 20mA.

0.2

0.3

1. Changed tCD from 4.0ns to 4.2ns at -75

2. Changed DC condition at Icc and parameters

ISB1 ; from 20mA to 30mA,

Sep. 09. 1998

Oct. 15. 1998

Preliminary

ISB2 ; from 20mA to 30mA.

1. ADD 119BGA(7x17 Ball Grid Array Package) .

2. ADD x32 organization.

0.4

1.0

1.Changed VOL Max value from 0.2V to 0.4V at 2.5V I/O.

Dec. 23 .1998

Jan. 29. 1999

Preliminary

Final

1. Final Spec Release.

2. Remove x32 organization.

2.0

3.0

4.0

1. Remove VDDQ Supply voltage( 2.5V I/O )

Feb. 25. 1999

Mar. 22. 1999

May. 13. 1999

Nov. 19. 1999

Final

1. Changed tOE from 4.2ns to 3.8ns at -75 , from 5.0ns to 3.8ns at -10

1. Add VDDQ Supply voltage( 2.5V I/O )

1. Add tCYC 167MHz and 200MHz.

2. Remove 119BGA package.

5.0

3. Changed DC condition at Icc and parameters

Icc ; from 420mA to 350mA at -67,

from 370mA to 300mA at -75,

from 300mA to 250mA at -10,

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

- 1 -

November 1999

Rev 5.0

12 3 4 5 6 7...17

中文翻译

下载PDF

与K7N803601M-TC20相关器件

型号	品牌	获取价格	描述	数据表
K7N803609B	SAMSUNG	获取价格	256Kx36 & 512Kx18 Pipelined NtRAM
K7N803609B-HC25	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 2.6ns, CMOS, PBGA119, BGA-119
K7N803609B-HI22	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 2.8ns, CMOS, PBGA119, BGA-119
K7N803609B-PC25	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 2.6ns, CMOS, PQFP100
K7N803609B-PC25T	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 2.6ns, CMOS, PQFP100, 20 X 14 MM, ROHS COMPLIANT, TQFP-100
K7N803609B-PI25	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 2.6ns, CMOS, PQFP100
K7N803609B-PI250	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 2.6ns, CMOS, PQFP100, 20 X 14 MM, ROHS COMPLIANT, TQFP-100
K7N803609B-QC20	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100
K7N803609B-QC200	SAMSUNG	获取价格	ZBT SRAM, 256KX36, 3.2ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100
K7N803609B-QC25	SAMSUNG	获取价格	256Kx36 & 512Kx18-Bit Pipelined NtRAM